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SCTW70N120G2V Search results
Premium Supplier
Premium A
Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
SCTW70N120G2V
|
STMICROELECTRONICS |  |
SIC MOSFET, SINGLE, N-CH, 1.2KV, 91A; | ROHS COMPLIANT | 574 | 1+ : $47.38 5+ : $46.96 10+ : $46.53 50+ : $46.11 100+ : $45.68 |
Buy Now
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
SCTWA30N120
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ST |
|
TO-247 | 69783 | 20+PB | Pb-Free | 26-11-07 |
Inquiry
|
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SCTWA50N120
|
ST |
|
TO-247longleads | 35000 | 20+PB | Pb-Free | 26-11-07 |
Inquiry
|
| SCTW35N65G2V | ST |
|
NA | 210000 | 20+PB | Pb-Free | 26-11-07 |
Inquiry
|
| SCTW90N65G2V | ST |
|
HIP247-3 | 21 | 20+PB | Pb-Free | 26-11-07 |
Inquiry
|
|
SCTW100N65G2AG
|
ST |
|
HiP247 | 621040 | 20+PB | Pb-Free | 26-11-07 |
Inquiry
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| SCTWA20N120 | ST |
|
HIP247 | 800000 | 2020+ | Instock | 26-11-07 |
Inquiry
|
| SCTWA30N120 | ST |
|
TO-247-3 | 80000 | 2020+ | Instock | 26-11-07 |
Inquiry
|
| SCTWA50N120 | ST |
|
HiP247 | 357 | 20+PB | Pb-Free | 26-11-07 |
Inquiry
|
| SCTW100N65G2AG | ST |
|
HiP247 | 3080 | 2020+ | Instock | 26-11-07 |
Inquiry
|
Basic
| Supplier | Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| Lvangchip(HongKong).,Limited | SCTW70N120G2V | STMicroele |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Inquiry
|
| ShenzhenMingxinfaTechnology | SCTW70N120G2V | ST |
|
HiP-247-3 | 3000 | 2026-09-18 |
Inquiry
|
||
| OCEAN ELECTRONIC | SCTW70N120G2V | ST |
|
Originalpackaging | 5000 | 2024-08-08 |
Inquiry
|
||
| HongKongTeyouHuichengElectroni | SCTW70N120G2V | ST |
|
TO247 | 45000 | 22+ | stock | 2026-03-19 |
Inquiry
|
1
SCTW70N120G2V Datasheet
| Mfg | Part # | Datasheet | Description |
 STMicroelectronics |
SCTW100N120G2AG |
217Kb/11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package Rev 4 - July 2020 |
| SCTW100N65G2AG |
423Kb/11P |
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package DS11643 - Rev 2 - November 2018 |
|
| SCTW35N65G2VAG |
206Kb/12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package Rev 3 - September 2020 |
|
| SCTW40N120G2V |
205Kb/12P |
Silicon carbide Power MOSFET 1200 V, 62 m廓 typ., 36 A in an HiP247 package Rev 2 - June 2021 |
|
| SCTW40N120G2VAG |
210Kb/12P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 m廓 (typ., TJ = 25 째C) in an HiP247 package Rev 3 - November 2020 |
|
| SCTW60N120G2AG |
197Kb/11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package Rev 1 - May 2020 |
|
 Inchange Semiconduc... |
SCTW90N65 |
364Kb/3P |
SiC N-Channel MOSFET |
|
STMicroelectronics |
SCTW90N65G2V |
402Kb/12P |
Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package DS11832 - Rev 5 - July 2019 |
|
Inchange Semiconduc... |
SCTWA35N65G2V4AG |
375Kb/4P |
SiC N-Channel MOSFET |
|
STMicroelectronics |
SCTWA35N65G2VAG |
243Kb/12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package Rev 1 - August 2020 |
| SCTWA40N120G2AG |
257Kb/12P |
Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package Rev 4 - November 2021 |
|
|
Inchange Semiconduc... |
SCTWA50N120 |
349Kb/3P |
SiC N-Channel MOSFET |
|
STMicroelectronics |
SCTWA60N120G2AG |
242Kb/12P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package Rev 1 - December 2020 |
| SCTWA70N120G2V |
229Kb/12P |
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A Rev 1 - October 2022 |
|
|
Inchange Semiconduc... |
SCTWA70N120G2V |
294Kb/2P |
SiC N-Channel MOSFET |
|
STMicroelectronics |
SCTWA90N65G2V |
249Kb/12P |
Silicon carbide Power MOSFET 650 V, 119 A, 18 m廓 in an HiP247 long leads package Rev 2 - August 2020 |
| SCTWA90N65G2V-4 |
239Kb/13P |
Silicon carbide Power MOSFET 650 V, 18 m廓 typ., 119 A in an HiP247-4 package Rev 1 - November 2020 |