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SCTW35N65G2VAG Search results
Premium Supplier
Premium A
Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
SCTW40N120G2V
|
STMICROELECTRONICS |  |
SIC MOSFET, N-CH, 1.2KV, 36A, HIP247; | ROHS COMPLIANT | 425 | 1+ : $24.2 5+ : $22.95 10+ : $21.7 50+ : $20.45 100+ : $19.2 250+ : $17.95 |
Buy Now
|
|
SCTW70N120G2V
|
STMICROELECTRONICS | |
SIC MOSFET, SINGLE, N-CH, 1.2KV, 91A; | ROHS COMPLIANT | 574 | 1+ : $47.38 5+ : $46.96 10+ : $46.53 50+ : $46.11 100+ : $45.68 |
Buy Now
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| SCTW35N65G2V | ST |
|
NA | 210000 | 20+PB | Pb-Free | 26-11-07 |
Inquiry
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| SCTWA20N120 | ST |
|
HIP247 | 800000 | 2020+ | Instock | 26-11-07 |
Inquiry
|
| SCTWA30N120 | ST |
|
TO-247-3 | 80000 | 2020+ | Instock | 26-11-07 |
Inquiry
|
| SCTWA50N120 | ST |
|
HiP247 | 357 | 20+PB | Pb-Free | 26-11-07 |
Inquiry
|
| SCTW100N65G2AG | ST |
|
HiP247 | 3080 | 2020+ | Instock | 26-11-07 |
Inquiry
|
Basic
| Supplier | Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| Shenzhen Augswan Electronics Co., LTD. | SCTW35N65G2VAG | ST |
|
4965 | 21+ | Stock | 2023-07-25 |
Inquiry
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|
| NegoICCo. |
SCTW35N65G2VAG
|
ST |
|
NA | 19688 | 2022+ | INSTOCK | 2026-08-21 |
Inquiry
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| KCTELECTRONICSHKCOLTD | SCTW35N65G2VAG | STMICROELE |
|
480 | 2315 | 2026-09-09 |
Inquiry
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| Lvangchip(HongKong).,Limited | SCTW35N65G2VAG | STMicroele |
|
SMD/DIP | 18800 | 23+ | Stock | 2024-03-06 |
Inquiry
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| ShenzhenMingxinfaTechnology | SCTW35N65G2VAG | ST |
|
HiP-247-3 | 3000 | 2026-09-18 |
Inquiry
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| HongKongTeyouHuichengElectroni |
SCTW35N65G2VAG
|
ST |
|
TO247 | 8200 | 2026-03-19 |
Inquiry
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1
SCTW35N65G2VAG Datasheet
| Mfg | Part # | Datasheet | Description |
 STMicroelectronics |
SCTW35N65G2VAG |
206Kb/12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package Rev 3 - September 2020 |