Engilsh
中文
한국어
Deutsch
日本語
Русский
Español
Français
Italiano
Português
polski
Tiếng Việt
LGE3369B Search results
Premium Supplier
Supplier
NegoICCo.
Andy(International)Electroni
Shenzhen Augswan Electronics Co., LTD.
IC Agent Electronics Ins
TOKYOSUPERDEVICECO.,LTD
Hongkong Teng Yun Tai (International) co.,Limited
Wintech Components Limited
Shenzhen Boshuo Technology Development Co., Ltd
WorldLinkPartscomponentsDe
FEDERAL INDUSTRY CO.
YUFO Electronics Limited
ALL NEW SEMI Electronics Co., LIMITED
Premium A
Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
LG16-0430D
|
SENSIRION |  |
FLOWMETER, LIQUID, 4-12V; | ROHS COMPLIANT | 5 | 1+ : $1,112.69 |
Buy Now
|
|
LG16-0431D
|
SENSIRION | |
FLOWMETER, LIQUID, 4-12V; | ROHS COMPLIANT | 19 | 1+ : $1,112.69 |
Buy Now
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| LGE3369B-LF-SE | LGE |
|
BGA550 | 504 | 20+PB | Pb-Free | 26-11-07 |
Inquiry
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| LGE3369B | LG |
|
BGA | 96 | 2020+ | Instock | 26-11-07 |
Inquiry
|
Basic
| Supplier | Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| Andy(International)Electroni | LGE3369B | LG |
|
BGA | 12 | 2018+ | 2026-11-02 |
Inquiry
|
|
| Shenzhen Augswan Electronics Co., LTD. | LGE3369B | LGElectron |
|
BGA | 8217 | 21+ | Stock | 2023-07-25 |
Inquiry
|
| NegoICCo. |
LGE3369B
|
LG |
|
BGA | 10000 | 2022+ | 2026-08-21 |
Inquiry
|
|
| IC Agent Electronics Ins | LGE3369B | LG |
|
BGA | 96 | 2020+ | Instock | 2026-11-03 |
Inquiry
|
| TOKYOSUPERDEVICECO.,LTD | LGE3369B | LG |
|
500 | 17+ | 2025-02-27 |
Inquiry
|
||
| Hongkong Teng Yun Tai (International) co.,Limited | LGE3369B | LG |
|
Original | 12 | 17+ | 2023-03-07 |
Inquiry
|
|
| Wintech Components Limited | LGE3369B | LG |
|
BGA | 20000 | 2021+ | INSTOCK | 2023-10-18 |
Inquiry
|
| NegoICCo. |
LGE3369B-LF
|
LG |
|
BGA | 10000 | 2022+ | 2026-08-21 |
Inquiry
|
|
| Shenzhen Boshuo Technology Development Co., Ltd | LGE3369B-LF-SE | LGE |
|
BGA550 | 3000 | 2212+ | 2024-09-22 |
Inquiry
|
|
| NegoICCo. |
LGE3369B-LF-SE
|
LGE |
|
BGA550 | 10000 | 2022+ | 2026-08-21 |
Inquiry
|
|
| WorldLinkPartscomponentsDe |
LGE3369B-LF-SE
|
LGE |
|
BGA550 | 2000 | 21+ | 2026-11-04 |
Inquiry
|
|
| FEDERAL INDUSTRY CO. | LGE3369B-LF-SE | LGE |
|
BGA550 | 504 | 20+PB | Pb-Free | 2026-11-03 |
Inquiry
|
| YUFO Electronics Limited | LGE3369B-LF-SE | LG |
|
BGA | 9 | 11+ | china-stock | 2023-11-08 |
Inquiry
|
| ALL NEW SEMI Electronics Co., LIMITED | LGE3369BLFSE | LGE |
|
BGA | 360 | 6 | 2026-11-05 |
Inquiry
|
1
LGE3369B Datasheet
| Mfg | Part # | Datasheet | Description |
 Shenzhen Luguang El... |
LGE3401L |
1Mb/6P |
P-Channel Enhancement Mode Power MOSFET |
| LGE3D02120F |
1Mb/4P |
Silicon Carbide Schottky Diode Revision:20230214-P1 |
|
| LGE3D04065A |
2Mb/4P |
Silicon Carbide Schottky Diode | |
| LGE3D05120A |
1Mb/4P |
Silicon CarbideSchottkyDiode Revision:20220701-P1 |
|
| LGE3D06065A |
2Mb/4P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D06065F |
1Mb/5P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D06065G |
1Mb/5P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D06065N |
2Mb/4P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D10065A |
1Mb/4P |
Silicon Carbide Schottky Diode Revision:20220701-P1 |
|
| LGE3D10065E |
1Mb/4P |
Silicon Carbide Schottky Diode Revision:20230214-P1 |
|
| LGE3D10065F |
2Mb/4P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D10065G |
1Mb/4P |
Silicon Carbide Schottky Diode Revision:20230210-P1 |
|
| LGE3D10065H |
2Mb/4P |
Silicon Carbide SchottkyDiode Revision:20230214-P1 |
|
| LGE3D15065A |
1Mb/4P |
Silicon Carbide Schottky Diode Revision:20220701-P1 |
|
| LGE3D20065A |
1Mb/5P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D20065D |
3Mb/5P |
Silicon Carbide SchottkyDiode Revision:20220704-P1 |
|
| LGE3D20065H |
1Mb/5P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D20120A |
2Mb/5P |
Silicon Carbide Schottky Diode | |
| LGE3D20120D |
1Mb/5P |
Silicon Carbide Schottky Diode Revision:20220701-P1 |
|
| LGE3D20120H |
1Mb/5P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D30065D |
2Mb/4P |
Silicon Carbide SchottkyDiode Revision:20230214-P1 |
|
| LGE3D30065H |
2Mb/4P |
Silicon Carbide Schottky Diode Revision:20230214-P1 |
|
| LGE3D30090H |
1Mb/5P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D30120D |
2Mb/4P |
Silicon Carbide Schottky Diode Revision:20230201-P1 |
|
| LGE3D30120H |
1Mb/4P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D40065H |
1Mb/5P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D40120H |
2Mb/4P |
Silicon Carbide SchottkyDiode Revision:20230215-P1 |
|
| LGE3D42090H |
1Mb/5P |
Silicon Carbide Schottky Diode Revision:20170701-P1 |
|
| LGE3D50120H |
2Mb/4P |
Silicon Carbide SchottkyDiode Revision:20230214-P1 |
|
| LGE3M14120Q |
9Mb/11P |
Silicon Carbide Power MOSFET Revision:20230215-P1 |