Engilsh
中文
한국어
Deutsch
日本語
Русский
Español
Français
Italiano
Português
polski
Tiếng Việt
IPB1214221K10 Search results
Premium Supplier
Premium A
Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
IPB120N04S401ATMA1
|
INFINEON |  |
MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A | ROHS COMPLIANT | 1+ : $5.24 10+ : $2.66 100+ : $2.4 500+ : $1.96 1000+ : $1.81 |
Buy Now
|
|
|
IPB120N04S401ATMA1
|
INFINEON | |
MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A | ROHS COMPLIANT | 100+ : $2.4 500+ : $1.96 1000+ : $1.81 |
Buy Now
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| IPB12CN10 | Infineon |
|
TO-263 | 2800 | 20+PB | Pb-Free | 26-11-10 |
Inquiry
|
| IPB120N06N | Infineon |
|
TO-263 | 35000 | 2016 | Instock | 26-11-10 |
Inquiry
|
| IPB12CN10N | Infineon |
|
TO-263 | 386750 | 20+PB | Pb-Free | 26-11-10 |
Inquiry
|
| IPB12N06NG | Infineon |
|
TO-263 | 386750 | 20+PB | Pb-Free | 26-11-10 |
Inquiry
|
IPB120N06NG
|
Infineon |
|
TO-263 | 386750 | 20+PB | Pb-Free | 26-11-10 |
Inquiry
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| IPB1214221K-10 | LAIRD |
|
DIP | 315000 | 2020+ | Instock | 26-11-10 |
Inquiry
|
Basic
| Supplier | Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| NegoICCo. |
IPB1214221K-10
|
LAIRD |
|
DIP | 19999 | 2022+ | INSTOCK | 2026-08-21 |
Inquiry
|
| IC Agent Electronics Ins | IPB1214221K-10 | LAIRD |
|
DIP | 315000 | 2020+ | Instock | 2026-11-03 |
Inquiry
|
| RANTLE EAST ELECTRONIC > www.digsemi.com | IPB1214221K-10 | LAIRD |
|
DIP | 45000 | ICRFQ | 2025-07-24 |
Inquiry
|
|
| FEDERAL INDUSTRY CO. | IPB1214221K-10 | LAIRD |
|
DIP | 135999 | 2020+ | Pb-Free | 2026-11-03 |
Inquiry
|
1
IPB1214221K10 Datasheet
| Mfg | Part # | Datasheet | Description |
 Infineon Technologi... |
IPB120N03S4L-03 |
283Kb/9P |
N-channel - Enhancement mode Rev. 1.1 2014-04-28 |
| IPB120N04S3-02 |
197Kb/9P |
OptiMOS-T Power-Transistor Rev. 1.0 2007-04-30 |
|
| IPB120N04S4-01 |
164Kb/9P |
OptiMOS-T2 Power-Transistor Rev. 1.0 2010-04-12 |
|
| IPB120N04S4-02 |
165Kb/9P |
OptiMOS-T2 Power-Transistor Rev. 1.0 2010-04-06 |
|
| IPB120N04S4-04 |
268Kb/8P |
N-channel - Enhancement mode Rev. 1.1 2014-04-07 |
|
| IPB120N04S4L-02 |
209Kb/9P |
N-channel Logic Level - Enhancement mode Rev. 1.0 2013-06-03 |
|
| IPB120N04S4L-02 |
209Kb/9P |
OptiMOSTM-T2 Power-Transistor Rev. 1.0 2013-06-03 |
|
| IPB120N04S4L02 |
209Kb/9P |
OptiMOSTM-T2 Power-Transistor Rev. 1.0 2013-06-03 |
|
| IPB120N06NG |
445Kb/10P |
OptiMOS짰 Power-Transistor Rev. 1.11 2006-07-05 |
|
| IPB120N06NG |
743Kb/10P |
OptiMOS Power-Transistor 2010-01-21 revision:1.16 |
|
 VBsemi Electronics ... |
IPB120N06NG |
1Mb/8P |
N-Channel 60-V (D-S) MOSFET |
|
Infineon Technologi... |
IPB120N06NG_10 |
743Kb/10P |
OptiMOS Power-Transistor 2010-01-21 revision:1.16 |
| IPB120N06S4-02 |
176Kb/9P |
OptiMOS-T2 Power-Transistor Rev. 1.2 2009-07-01 |
|
 Inchange Semiconduc... |
IPB120N06S4-02 |
330Kb/2P |
N-Channel MOSFET Transistor |
|
Infineon Technologi... |
IPB120N06S4-03 |
175Kb/9P |
OptiMOS-T2 Power-Transistor Rev. 1.0 2009-03-23 |
| IPB120N06S4-H1 |
175Kb/9P |
OptiMOS-T2 Power-Transistor Rev. 1.0 2009-03-23 |
|
| IPB120N08S4-03 |
231Kb/9P |
N-channel - Enhancement mode | |
| IPB120N08S4-04 |
217Kb/9P |
N-channel - Enhancement mode Rev. 1.0 2014-06-20 |
|
| IPB120N10S4-03 |
358Kb/9P |
N-channel - Normal Level - Enhancement mode Rev. 1.0 2014-06-30 |
|
| IPB120N10S4-05 |
392Kb/9P |
N-channel - Normal Level - Enhancement mode Rev.1.0 2014-07-01 |
|
|
Inchange Semiconduc... |
IPB120N10S4-05 |
400Kb/2P |
isc N-Channel MOSFET Transistor |
|
Infineon Technologi... |
IPB120P04P4-04 |
212Kb/9P |
OptiMOS-P2 Power-Transistor Rev. 1.0 2011-02-14 |
| IPB120P04P4-04 |
243Kb/9P |
P-channel - Normal Level - Enhancement mode Rev. 1.1 2015-05-27 |
|
| IPB120P04P4-04_15 |
243Kb/9P |
P-channel - Normal Level - Enhancement mode Rev. 1.1 2015-05-27 |
|
| IPB120P04P4L-03 |
213Kb/9P |
OptiMOS-P2 Power-Transistor Rev. 1.0 2011-02-10 |
|
| IPB120P04P4L-03 |
254Kb/9P |
P-channel - Logic Level - Enhancement mode Rev. 1.1 2015-05-27 |
|
| IPB120P04P4L-03_15 |
254Kb/9P |
P-channel - Logic Level - Enhancement mode Rev. 1.1 2015-05-27 |
|
| IPB123N10N3 |
635Kb/11P |
N-channel normal level 2010-06-23 revision:2.3 |
|
| IPB123N10N3-G |
635Kb/11P |
N-channel normal level 2010-06-23 revision:2.3 |
|
| IPB123N10N3-G |
351Kb/11P |
OptiMOSTM3 Power-Transistor Rev. 2.3 2010-06-23 |