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GT5010TAGITR Search results
Premium Supplier
Premium A
Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
| GT50-4P-1H | HIROSE / HRS |  |
CONN, R/A HEADER, 4POS, 1ROW, 1MM, SMT; | ROHS COMPLIANT | 617 | 1+ : $2.33 10+ : $2.04 100+ : $1.85 500+ : $1.6 1000+ : $1.36 2500+ : $1.34 |
Buy Now
|
| GT50-4S-1C | HIROSE / HRS | |
CONNECTOR HOUSING, RCPT, 4POS, 1MM; | ROHS COMPLIANT | 1+ : $0.597 100+ : $0.315 500+ : $0.288 1000+ : $0.246 |
Buy Now
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
GT50G321
|
TOSHIBA |
|
TO-247 | 386750 | 20+PB | Pb-Free | 26-11-05 |
Inquiry
|
|
GT50J101
|
TOSHIBA |
|
TO-3P | 386750 | 20+PB | Pb-Free | 26-11-05 |
Inquiry
|
|
GT50J102
|
TOSHIBA |
|
TO-3PL | 386750 | 20+PB | Pb-Free | 26-11-05 |
Inquiry
|
| GT50J121 | TOSHIBA |
|
TO-3P(LH) | 45000 | 2016 | Instock | 26-11-05 |
Inquiry
|
| GT50J122 | TOSHIBA |
|
TO-3P(N) | 45000 | 2016 | Instock | 26-11-05 |
Inquiry
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| GT5010-TAGI-TR | GT |
|
SMD | 21000 | 2020+ | Instock | 26-11-05 |
Inquiry
|
Basic
| Supplier | Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| Shenzhen Augswan Electronics Co., LTD. | GT5010-TAG1-TR | GiantecSem |
|
SOT23-6 | 8000 | 21+ | Stock | 2023-07-25 |
Inquiry
|
| NegoICCo. |
GT5010-TAG1-TR
|
GIANTEC |
|
SOT23-6 | 10000 | 2022+ | 2026-08-21 |
Inquiry
|
|
| Shenzhen Augswan Electronics Co., LTD. | GT5010-TAGI-TR | GT |
|
SOT23-6 | 15245 | 21+ | Stock | 2023-07-25 |
Inquiry
|
| NegoICCo. |
GT5010-TAGI-TR
|
GT |
|
SMD | 10000 | 2022+ | 2026-08-21 |
Inquiry
|
|
| ClicElectronicsCo.Limited | GT5010-TAGI-TR |
|
SOT23-6 | 4000 | 11+ | 2025-06-04 |
Inquiry
|
||
| IC Agent Electronics Ins | GT5010-TAGI-TR | GT |
|
SMD | 21000 | 2020+ | Instock | 2026-11-03 |
Inquiry
|
| JAK ELECTRONICS LIMITED | GT5010-TAGI-TR | Original |
|
3000 | Stock | 2019-10-30 |
Inquiry
|
||
| NegoICCo. |
GT5010-TAGI-TRXXXXXXXXXX
|
|
SOT23-6 | 10000 | 2022+ | 2026-08-21 |
Inquiry
|
||
| Shenzhen Augswan Electronics Co., LTD. | GT5010A-TAG1-TR | GiantecSem |
|
SOT23-6 | 13323 | 21+ | Stock | 2023-07-25 |
Inquiry
|
| NegoICCo. |
GT5010A-TAG1-TR
|
GIANTEC |
|
SOT23-6 | 10000 | 2022+ | 2026-08-21 |
Inquiry
|
|
| Shenzhen Augswan Electronics Co., LTD. | GT5010A-TAGI-TR | GT |
|
SOT23-6 | 9006 | 21+ | Stock | 2023-07-25 |
Inquiry
|
| NegoICCo. |
GT5010A-TAGI-TR
|
GT |
|
SOT23-6 | 10000 | 2022+ | 2026-08-21 |
Inquiry
|
|
| Wintech Components Limited | GT5010A-TAGI-TR | GT |
|
SOT23-6 | 20000 | 2021+ | INSTOCK | 2023-10-18 |
Inquiry
|
| NegoICCo. |
GT5010A-TAGI-TRXXXXXXXXX
|
|
SOT23-6 | 10000 | 2022+ | 2026-08-21 |
Inquiry
|
1
GT5010TAGITR Datasheet
| Mfg | Part # | Datasheet | Description |
 Toshiba Semiconduct... |
GT50G101 |
835Kb/16P |
Discrete IGBTs |
| GT50G102 |
835Kb/16P |
Discrete IGBTs | |
| GT50G321 |
287Kb/6P |
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | |
| GT50J101 |
835Kb/16P |
Discrete IGBTs | |
| GT50J102 |
254Kb/5P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
| GT50J102 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J121 |
317Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
| GT50J121 |
190Kb/6P |
Silicon N Channel IGBT High Power Switching Applications | |
| GT50J121 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J121_06 |
190Kb/6P |
Silicon N Channel IGBT High Power Switching Applications | |
| GT50J122 |
160Kb/6P |
Current Resonance Inverter Switching Application | |
| GT50J123 |
220Kb/10P |
Discrete IGBTs Silicon N-Channel IGBT | |
| GT50J301 |
282Kb/5P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
| GT50J301 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J322 |
254Kb/5P |
N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) | |
| GT50J322 |
614Kb/6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT | |
| GT50J322 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J322H |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J322_06 |
614Kb/6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT | |
| GT50J325 |
170Kb/7P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
| GT50J325 |
198Kb/7P |
Silicon N Channel IGBT High Power Switching Applications | |
| GT50J325 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J325_06 |
198Kb/7P |
Silicon N Channel IGBT High Power Switching Applications | |
| GT50J327 |
159Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application | |
| GT50J327 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J328 |
232Kb/6P |
Current Resonance Inverter Switching Application Fourth Generation IGBT | |
| GT50J328 |
1Mb/73P |
Bipolar Small-Signal Transistors | |
| GT50J341 |
250Kb/9P |
Discrete IGBTs Silicon N-Channel IGBT | |
| GT50JR21 |
207Kb/7P |
Discrete IGBTs Silicon N-Channel IGBT | |
| GT50JR22 |
207Kb/7P |
Discrete IGBTs Silicon N-Channel IGBT |