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DFNS11BLRZ40MHZXE25 Search results
Premium Supplier
Premium A
Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
DF1
|
LCR COMPONENTS |  |
CHOKE, 1.17MH, 1A, DIFFERENTIAL MODE; Product Range:-; Inductance:1.17mH; DC Current Rating:1A; DC R | ROHS COMPLIANT | 1+ : $9 2+ : $7.8 3+ : $6.26 5+ : $5.85 10+ : $5.43 20+ : $4.5 50+ : $3.96 100+ : $3.51 |
Buy Now
|
|
|
DF2
|
LCR COMPONENTS | |
CHOKE, 0.5MH, 2A, DIFFERENTIAL MODE; Product Range:-; Inductance:500µH; DC Current Rating:2A; DC Res | ROHS COMPLIANT | 1+ : $9.96 2+ : $8.02 3+ : $7.48 5+ : $6.93 10+ : $5.77 20+ : $5.05 |
Buy Now
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Premium B
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| DFNS11BLRZ40MHZXE25 | RoHs |
|
Original&New | 15000 | 2016 | Instock | 26-11-08 |
Inquiry
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info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
DFNS11BLRZ40MHZXE25
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RoHs |
|
Original&New | 20000 | 2016+ | Instock | 26-11-08 |
Inquiry
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Basic
| Supplier | Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| ERAI Sale Development | DFNS11BLRZ40MHZXE25 | RoHs |
|
Original&New | 28000 | 15-16+ | Originalstock | 2020-05-29 |
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| MicrotranikComponents,Inc | DFNS11BLRZ40MHZXE25 | Distributor |
|
for more pls inquire us now | 234290 | 17+RoHS | New instock, best quality | 2026-09-29 |
Inquiry
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| Transcrui Microcircuit Corporation | DFNS11BLRZ40MHZXE25 | TI |
|
Original Parts&RoHS | 88840 | 18+ | NEWSTOCK,HOT SALE!!! | 2024-09-23 |
Inquiry
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| Evatronix(HK) Electronics Trade Inc | DFNS11BLRZ40MHZXE25 | NS |
|
Original Parts, Quality excellent | 203990 | 18+RoHS | Instock，Rush delivery | 2024-09-24 |
Inquiry
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| IC Agent Electronics Ins |
DFNS11BLRZ40MHZXE25
|
RoHs |
|
Original&New | 20000 | 2016+ | Instock | 2026-11-03 |
Inquiry
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| Microtranik+Components | DFNS11BLRZ40MHZXE25 | Distributor |
|
for more pls inquire us now | 234290 | 19+ | New instock - high quality | 2023-11-28 |
Inquiry
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| FEDERAL INDUSTRY CO. | DFNS11BLRZ40MHZXE25 | RoHs |
|
Original&New | 15000 | 2016 | Instock | 2026-11-03 |
Inquiry
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1
DFNS11BLRZ40MHZXE25 Datasheet
| Mfg | Part # | Datasheet | Description |
 Amkor Technology |
DFN |
754Kb/3P |
Saw MLF PEL (Plated End Lead) Package |
 Vishay Siliconix |
DFN |
110Kb/3P |
Dual Flat No Lead Molded Precision Thin Film Resistor Surface Mount Network Revision: 28-May-15 |
 Analog Microelectro... |
DFN-10B |
52Kb/1P |
(3x3x0.75mm) MIN 0.700 MAX 0.800 |
| DFN-10B |
34Kb/1P |
(3x3x0.75mm) Carrier Width (W) 12.0+-0.1 mm | |
 Protek Devices |
DFN-2-0402 |
280Kb/5P |
package outline & pad layout |
|
Analog Microelectro... |
DFN-6D |
33Kb/1P |
(2x2x0.75mm) MIN 0.700 MAX 0.800 |
| DFN-6D |
27Kb/1P |
(2x2x0.75mm) Carrier Width (W) 8.0+-0.1 mm | |
 Unisonic Technologi... |
DFN-8 |
231Kb/6P |
1.1W AUDIO POWER AMPLIFIER WITH SHUTDOWN MODE |
|
Analog Microelectro... |
DFN-8C |
59Kb/1P |
(3x3x0.75mm) MIN 0.700 MAX 0.800 |
| DFN-8C |
36Kb/1P |
(3x3x0.75mm) Carrier Width (W) 12.0+-0.1 mm | |
 Diodes Incorporated |
DFN0603H3-2 |
776Kb/32P |
PACKAGE OUTLINE DIMENSIONS AP02002 Rev. 44 |
 Alpha & Omega Semic... |
DFN1.2X1.1_6L |
64Kb/1P |
CONTROLLING DIMENSION IS MILLIMETER |
 Global Mixed-mode T... |
DFN1.6X1.6-6 |
190Kb/1P |
Package Outline |
|
Diodes Incorporated |
DFN1006-2 |
776Kb/32P |
PACKAGE OUTLINE DIMENSIONS AP02002 Rev. 44 |
| DFN1006-2 |
174Kb/12P |
SUGGESTED PAD LAYOUT AP02001 Rev. 38 |
|
 Galaxy Semi-Conduct... |
DFN1006-2 |
62Kb/1P |
PACKAGE OUTLINE DIMENSIONS |
|
Diodes Incorporated |
DFN1006-3 |
776Kb/32P |
PACKAGE OUTLINE DIMENSIONS AP02002 Rev. 44 |
 Nexperia B.V. All r... |
DFN1006B-3 |
616Kb/12P |
PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open |
| DFN1006B-3 |
628Kb/13P |
PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 10 k廓 | |
| DFN1006B-3 |
845Kb/12P |
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓 | |
| DFN1006B-3 |
617Kb/12P |
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = open | |
| DFN1006B-3 |
842Kb/12P |
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 47 k廓 | |
| DFN1006B-3 |
960Kb/12P |
PNP resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓 | |
| DFN1006B-3 |
721Kb/12P |
NPN resistor-equipped transistor; R1 = 22 k廓, R2 = open | |
| DFN1006B-3 |
755Kb/13P |
PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 1 k廓 | |
| DFN1006B-3 |
836Kb/13P |
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓 | |
| DFN1006B-3 |
842Kb/12P |
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓 | |
|
Diodes Incorporated |
DFN1006H4-2 |
776Kb/32P |
PACKAGE OUTLINE DIMENSIONS AP02002 Rev. 44 |
| DFN1006H4-2 |
174Kb/12P |
SUGGESTED PAD LAYOUT AP02001 Rev. 38 |
|
| DFN1006H4-3 |
776Kb/32P |
PACKAGE OUTLINE DIMENSIONS AP02002 Rev. 44 |