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DFE2HCAH1R0MJ0L Search results
Premium Supplier
Supplier
TIMICOMM Electronics
CynexaTechnologyCo.,Limited
Semilex Distributor
HK Future Electronic Co.,Ltd
HongKong Capacitors,LTD
Transcrui Microcircuit Corporation
Evatronix(HK) Electronics Trade Inc
Yunfu HongKong Electronics,LTD.
Yunfu HongKong Electronics Co.,LTD.
Semilex Electronics Direct
Unitronix Electronics Inc.
HongKongTeyouHuichengElectroni
Premium A
Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
| DFE2HCAH1R0MJ0L | MURATA |  |
POWER INDUCTOR, SHIELDED, 1UH, 3A, 1008; | ROHS COMPLIANT | 5+ : $0.867 50+ : $0.712 250+ : $0.613 500+ : $0.574 1500+ : $0.524 3000+ : $0.478 |
Buy Now
|
|
DFE2HCAH1R0MJ0L
|
MURATA POWER SOLUTIONS | |
WIREWOUND INDUCTOR, 1UH, 3.4A, 1008; | ROHS COMPLIANT | 1,988 | 50+ : $0.559 250+ : $0.487 500+ : $0.46 1500+ : $0.443 3000+ : $0.419 |
Buy Now
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| DFE201610P-2R2M | MURATA |
|
DFE201610PS | 61516 | 20+PB | Pb-Free | 26-11-08 |
Inquiry
|
| DFE201612E-R47M | TOKO |
|
SMD | 462 | 20+PB | Pb-Free | 26-11-08 |
Inquiry
|
| DFE252008C-R47M | TOKO |
|
SMD | 476559 | 2020+ | Pb-Free | 26-11-08 |
Inquiry
|
| DFE252010P-2R2M | TOKO |
|
SMD | 91299 | 2020+ | Pb-Free | 26-11-08 |
Inquiry
|
| DFE252012P-3R3M | YAGEO |
|
SMD | 86559 | 2020+ | Pb-Free | 26-11-08 |
Inquiry
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| DFE201610P-1R0M |
|
25000 | 2016+ | Instock | 26-11-08 |
Inquiry
|
||
| DFE201610P-1R5M | TOKO |
|
SMD | 378700 | 2020+ | Instock | 26-11-08 |
Inquiry
|
| DFE201610P-R47M | TOKO |
|
SMD | 406700 | 2020+ | Instock | 26-11-08 |
Inquiry
|
| DFE201610P-R68M | TOKO |
|
SMD | 364700 | 2020+ | Instock | 26-11-08 |
Inquiry
|
| DFE252008C-R47M | TOKO |
|
SMD | 1109640 | 2020+ | Instock | 26-11-08 |
Inquiry
|
Basic
| Supplier | Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| TIMICOMM Electronics [ info@timicomm.com ] | DFE2HCAH1R0MJ0L | MURATA |
|
FIXED IND 1.0UH 3.4A POWERTRN | 113500 | 2022+ | new STOCK | 2026-01-06 |
Inquiry
|
| CynexaTechnologyCo.,Limited | DFE2HCAH1R0MJ0L | MurataElec |
|
FIXEDIND1UH3A50MOHMSMD | 1697 | Instock | 2026-08-05 |
Inquiry
|
|
| Semilex Distributor [ sales@semi-lex.com ] |
DFE2HCAH1R0MJ0L
|
MURATA |
|
FIXED IND 1.0UH 3.4A POWERTRN | 224382 | 2019+ | Can ship immediately | 2024-09-25 |
Inquiry
|
| HK Future Electronic Co.,Ltd | DFE2HCAH1R0MJ0L | muRata |
|
onlynew&original | 3000 | 21+ | instock | 2023-07-26 |
Inquiry
|
| HongKong Capacitors,LTD | DFE2HCAH1R0MJ0L | MurataElectronics |
|
N/A | 3000 | N/A | 2020-11-10 |
Inquiry
|
|
| Transcrui Microcircuit Corporation |
DFE2HCAH1R0MJ0L
|
MURATA |
|
FIXED IND 1.0UH 3.4A POWERTRN | 68525 | 2022+ | Original instock，Rush delivery | 2024-09-23 |
Inquiry
|
| Evatronix(HK) Electronics Trade Inc |
DFE2HCAH1R0MJ0L
|
MURATA |
|
FIXED IND 1.0UH 3.4A POWERTRN | 66466 | 2020+ | HOT SALES & GLOBAL | 2024-09-24 |
Inquiry
|
| Yunfu HongKong Electronics,LTD. | DFE2HCAH1R0MJ0L | Murata Electronics |
|
N/A | 3000 | N/A | 2020-12-04 |
Inquiry
|
|
| Yunfu HongKong Electronics Co.,LTD. | DFE2HCAH1R0MJ0L | Murata Electronics |
|
N/A | 3000 | N/A | 2020-11-04 |
Inquiry
|
|
| Semilex Electronics Direct [ info@semi-lex.com ] |
DFE2HCAH1R0MJ0L
|
MURATA |
|
FIXED IND 1.0UH 3.4A POWERTRN | 224382 | 2020+ | Can ship immediately | 2026-09-29 |
Inquiry
|
| Unitronix Electronics Inc. [sales@unitronix-e.com] |
DFE2HCAH1R0MJ0L
|
MURATA |
|
FIXED IND 1.0UH 3.4A POWERTRN | 147530 | 2020+ | HOT SALES | 2026-01-06 |
Inquiry
|
| HongKongTeyouHuichengElectroni | DFE2HCAH1R0MJ0L | Murata Ele |
|
1008 (2520 Metric) | 55000 | 22+ | stock | 2026-03-19 |
Inquiry
|
1
DFE2HCAH1R0MJ0L Datasheet
| Mfg | Part # | Datasheet | Description |
 Murata Manufacturin... |
DFE201208S-1R0M |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% |
| DFE201208S-1R0M |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-1R0M# |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-1R0M# |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-1R0M_18 |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-1R5M |
999Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-1R5M |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-1R5M# |
999Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-1R5M# |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-1R5M_18 |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-2R2M |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-2R2M |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-2R2M# |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-2R2M;;P2 |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-2R2M_18 |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-R47M |
999Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-R47M |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-R47M# |
999Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-R47M# |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201208S-R47M_18 |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201210S-1R0M |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201210S-1R0M |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201210S-1R0M# |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201210S-1R0M# |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201210S-1R0M_18 |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201210S-1R5M |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201210S-1R5M |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201210S-1R5M# |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201210S-1R5M# |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201210S-1R5M_18 |
998Kb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% |