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DFE201610ER68MP2 Search results
Premium Supplier
Supplier
Premium A
Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
DFE201610E-100M=P2
|
MURATA |  |
INDUCTOR, 10UH, 0.75A, 0806, SHIELDED; Inductance:10µH; RMS Current (Irms):-; Inductor Construction: | ROHS COMPLIANT | 10,320 | 5+ : $0.341 50+ : $0.283 250+ : $0.234 500+ : $0.213 1500+ : $0.192 3000+ : $0.172 |
Buy Now
|
|
DFE201610E-100M=P2
|
MURATA | |
INDUCTOR, 10UH, 0.75A, 0806, SHIELDED; Inductance:10µH; RMS Current (Irms):-; Inductor Construction: | ROHS COMPLIANT | 10,320 | 50+ : $0.283 250+ : $0.234 500+ : $0.213 1500+ : $0.192 3000+ : $0.172 |
Buy Now
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| DFE201610E-100MP2 | TOKO |
|
SMD | 30999 | 2020+ | Pb-Free | 26-11-08 |
Inquiry
|
| DFE201610E-2R2MP2 | MURATA |
|
SMD | 3416 | 20+PB | Pb-Free | 26-11-08 |
Inquiry
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| DFE201610E-1R5MP2 | MURATA/ |
|
SMD | 38661 | 2020+ | Instock | 26-11-08 |
Inquiry
|
DFE201610E-4R7MP2
|
TOKO |
|
201610 | 240 | 2020+ | Instock | 26-11-08 |
Inquiry
|
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DFE201610E-R47MP2
|
TOKO |
|
201610 | 4640 | 2020+ | Instock | 26-11-08 |
Inquiry
|
Basic
| Supplier | Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| abc株式会社 | DFE201610ER33MP2 |
|
30000 | 2025-12-18 |
Inquiry
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| abc株式会社 | DFE201610ER47MCAP2 |
|
30000 | 2025-12-18 |
Inquiry
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| abc株式会社 | DFE201610ER47MCCP2 |
|
30000 | 2025-12-18 |
Inquiry
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| abc株式会社 | DFE201610ER47MP2 |
|
30000 | 2025-12-18 |
Inquiry
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| TOKYOSUPERDEVICECO.,LTD | DFE201610ER47MP2 | MURATA |
|
1135 | 14+ | 2025-02-27 |
Inquiry
|
1
DFE201610ER68MP2 Datasheet
| Mfg | Part # | Datasheet | Description |
 TOKO, Inc |
DFE201610E |
233Kb/1P |
The use of Flat wire for Low DC resistance |
| DFE201610E-100M |
233Kb/1P |
The use of Flat wire for Low DC resistance | |
| DFE201610E-100M |
228Kb/1P |
Metal Alloy Inductors | |
 Murata Manufacturin... |
DFE201610E-100M |
982Kb/2P |
Inductor |
| DFE201610E-100M |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201610E-100M# |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201610E-100M_18 |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
|
TOKO, Inc |
DFE201610E-1R0M |
233Kb/1P |
The use of Flat wire for Low DC resistance |
| DFE201610E-1R0M |
228Kb/1P |
Metal Alloy Inductors | |
|
Murata Manufacturin... |
DFE201610E-1R0M |
982Kb/2P |
Inductor |
| DFE201610E-1R0M |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201610E-1R0M# |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201610E-1R0M_18 |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
|
TOKO, Inc |
DFE201610E-1R5M |
233Kb/1P |
The use of Flat wire for Low DC resistance |
| DFE201610E-1R5M |
228Kb/1P |
Metal Alloy Inductors | |
|
Murata Manufacturin... |
DFE201610E-1R5M |
982Kb/2P |
Inductor |
| DFE201610E-1R5M |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201610E-1R5M# |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE201610E-1R5M_18 |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
|
TOKO, Inc |
DFE201610E-2R2M |
233Kb/1P |
The use of Flat wire for Low DC resistance |
| DFE201610E-2R2M |
228Kb/1P |
Metal Alloy Inductors | |
|
Murata Manufacturin... |
DFE201610E-2R2M |
982Kb/2P |
Inductor |
| DFE201610E-2R2M |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%. 2018/05/16 |
|
 Richtek Technology ... |
DFE201610E-2R2M |
1Mb/25P |
Tiny, 360nA Low Quiescent Current, 0.5A/1A HCOT nanoPower Buck Converter March 2023 |
|
Murata Manufacturin... |
DFE201610E-2R2M# |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%. 2018/05/16 |
| DFE201610E-2R2M_18 |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%. 2018/05/16 |
|
|
TOKO, Inc |
DFE201610E-4R7M |
233Kb/1P |
The use of Flat wire for Low DC resistance |
| DFE201610E-4R7M |
228Kb/1P |
Metal Alloy Inductors | |
|
Murata Manufacturin... |
DFE201610E-4R7M |
982Kb/2P |
Inductor |
| DFE201610E-4R7M |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% |