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BF998RL6327 Search results
Premium Supplier
Premium A
Element14
| Part # | Mfg | Datasheet | Description | RoHS | Q'ty | Price | Buy Now |
BF904,215
|
NXP |  |
MOSFET, DUAL GATE, N CH, RF, SOT-143; Drain Source Voltage Vds:7V; Continuous Drain Current Id:30mA; | ROHS COMPLIANT | 5+ : $0.905 10+ : $0.593 100+ : $0.399 500+ : $0.306 1000+ : $0.248 5000+ : $0.213 |
Buy Now
|
|
|
BF904,215
|
NXP | |
MOSFET, DUAL GATE, N CH, RF, SOT-143; Drain Source Voltage Vds:7V; Continuous Drain Current Id:30mA; | ROHS COMPLIANT | 10+ : $0.593 100+ : $0.399 500+ : $0.306 1000+ : $0.248 5000+ : $0.213 |
Buy Now
|
Premium B
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
BF998R
|
PHILIPS |
|
SOT-23 | 11543 | 20+PB | Pb-Free | 26-11-13 |
Inquiry
|
info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| BF998RL6327 | INFINI |
|
48000 | 2016+ | RoHS | 26-11-13 |
Inquiry
|
Basic
| Supplier | Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| Andy(International)Electroni | BF998RL6327 | INFINION |
|
1100 | 2018+ | 2026-11-02 |
Inquiry
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| NegoICCo. |
BF998RL6327
|
INFINION |
|
621906 | 2022+ | INSTOCK | 2026-08-21 |
Inquiry
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| futuro trade ltd. | BF998RL6327 | NXP |
|
SOT-343/SOT-143/. | 4919182 | 15+ROHS/11 | stock | 2017-08-23 |
Inquiry
|
| HAODE TECHNOLOGY CO.,LIMITED | BF998RL6327 | INFINION |
|
2254 | 2022+ | 2024-04-11 |
Inquiry
|
||
| IC Agent Electronics Ins | BF998RL6327 | INFINI |
|
48000 | 2016+ | RoHS | 2026-11-03 |
Inquiry
|
1
BF998RL6327 Datasheet
| Mfg | Part # | Datasheet | Description |
 NXP Semiconductors |
BF998R |
114Kb/12P |
Silicon N-channel dual-gate MOS-FETs 1996 Aug 01 |
 Vishay Siliconix |
BF998R |
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99 |
 Siemens Semiconduct... |
BF998R |
33Kb/2P |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
 Infineon Technologi... |
BF998R |
249Kb/6P |
Silicon N-Channel MOSFET Tetrode Feb-13-2004 |
|
Vishay Siliconix |
BF998R |
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 |
|
Infineon Technologi... |
BF998R |
93Kb/9P |
Silicon N_Channel MOSFET Tetrode 2007-04-20 |
 NXP Semiconductors |
BF998R |
9Mb/130P |
RF Manual 16th edition June 2012 |
|
Vishay Siliconix |
BF998RA |
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99 |
| BF998RA |
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 |
|
| BF998RA-GS08 |
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 |
|
| BF998RAW |
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99 |
|
| BF998RAW |
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 |
|
| BF998RAW-GS08 |
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 |
|
| BF998RB |
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99 |
|
| BF998RBW |
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99 |
|
| BF998RBW |
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 |
|
| BF998RBW-GS08 |
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 |
|
| BF998RW |
155Kb/9P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99 |
|
| BF998RW |
318Kb/10P |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08 |