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VI302DPRC. Search results
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info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| VI30200C | VISHAY |
|
TO-262 | 45000 | 2016 | Instock | 26-09-18 |
Inquiry
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VI302DPRC. Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
VI30200C |
158Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A Revision: 31-Jul-08 |
| VI30200C |
160Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VI30200C |
157Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5A Revision: 17-Aug-15 |
|
| VI30200C |
155Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 17-Aug-15 |
|
| VI30200C |
216Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VI30200C-E3-4W |
160Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VI30200C-E3/4W |
158Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A Revision: 31-Jul-08 |
|
| VI30202C |
166Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 31-Oct-14 |
|
| VI30202C |
155Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 19-Dec-14 |
|
| VI30202C |
207Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |