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VF406010Q Search results
Premium Supplier
Premium B
Total: 4
( 1/1 Page)
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| VF4060-10Q |
|
OriginalNew | 13800 | 2016 | Instock | 26-09-26 |
Inquiry
|
|
VF4060-1QC
|
PLCC |
|
8500 | 2016 | Instock | 26-09-26 |
Inquiry
|
|
| VF4060-1QD | APPLE |
|
PLCC-28 | 28400 | 2016 | Instock | 26-09-26 |
Inquiry
|
|
VF4060A1QC
|
PLCC28 |
|
VLSI | 8500 | 2016 | Instock | 26-09-26 |
Inquiry
|
1
VF406010Q Datasheet
| Mfg | Part # | Datasheet | Description |
 New Jersey Semi-Con... |
VF40 |
91Kb/1P |
Diffused Silicon Junction |
 Honeywell Solid Sta... |
VF401 |
616Kb/5P |
2-Wire Solid State Switch |
 Vishay Siliconix |
VF40100C |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 26-May-08 |
| VF40100C |
160Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 14-Nov-14 |
|
| VF40100C |
155Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 14-Nov-14 |
|
| VF40100C |
135Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VF40100C-E3 |
1Mb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VF40100C-E3/4W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 26-May-08 |
|
| VF40100C_15 |
85Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 17-Aug-15 |
|
| VF40100C_V01 |
135Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VF40100G |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A Revision: 19-May-08 |
|
| VF40100G |
130Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VF40100G-E3 |
161Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 09-Sep-13 |
|
| VF40100G-E3 |
151Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 09-Sep-13 |
|
| VF40100G-E3 |
217Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VF40100G-E3/4W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A Revision: 19-May-08 |
|
| VF40100G-E3/4W |
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VF40100G_V01 |
130Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VF40120C |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 19-May-08 |
|
| VF40120C |
78Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 10-Nov-10 |
|
| VF40120C |
158Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 16-Aug-13 |
|
| VF40120C |
148Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 16-Aug-13 |
|
| VF40120C |
127Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
 DAESAN ELECTRONIC C... |
VF40120C |
538Kb/2P |
Powerpack MOS Schottky Barrier Rectifier |
|
Vishay Siliconix |
VF40120C-E3/4W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A Revision: 19-May-08 |
| VF40120C-M3-4W |
78Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 10-Nov-10 |
|
| VF40120C_10 |
78Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 10-Nov-10 |
|
| VF40120C_15 |
79Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 17-Aug-15 |
|
| VF40120C_V01 |
127Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VF40150C |
168Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A Revision: 19-May-08 |