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VB40100C Search results
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info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| VB40100C | VISHAY |
|
TO-263 | 45000 | 2016 | Instock | 26-09-25 |
Inquiry
|
| VB40100C-E3/4W | VISHAY |
|
NA | 210000 | 20+PB | Pb-Free | 26-09-25 |
Inquiry
|
VB40100C-E3/8W
|
VISHAY |
|
TO-263 | 595 | 20+PB | Pb-Free | 26-09-25 |
Inquiry
|
1
VB40100C Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
VB40100C |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 26-May-08 |
| VB40100C |
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB40100C-E3 |
160Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 14-Nov-14 |
|
| VB40100C-E3 |
155Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 14-Nov-14 |
|
| VB40100C-E3 |
1Mb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB40100C-E3/4W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 26-May-08 |
|
| VB40100C-E3/4W |
157Kb/5P |
Dual High-Voltage Trench MOS barrier Schottky Rectifier Revision: 19-Oct-11 |
|
| VB40100C-E3/8W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 26-May-08 |
|
| VB40100C-E3/8W |
157Kb/5P |
Dual High-Voltage Trench MOS barrier Schottky Rectifier Revision: 19-Oct-11 |
|
| VB40100C-M3 |
91Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 03-Jan-17 |
|
| VB40100C-M3_15 |
79Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 15-May-13 |
|
| VB40100CHM3 |
91Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 03-Jan-17 |