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VB3.2218 Search results
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info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| VB3.2/2/9 | BLOCK |
|
16100 | 20+PB | Pb-Free | 26-09-25 |
Inquiry
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1
VB3.2218 Datasheet
| Mfg | Part # | Datasheet | Description |
 New Jersey Semi-Con... |
VB30 |
102Kb/1P |
These rectifiers offer high voltage ranges in minimum-sized |
 Extech Instruments ... |
VB300 |
140Kb/1P |
3-Axis G-Force Datalogger |
 Vishay Siliconix |
VB30100C |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Revision: 19-May-08 |
| VB30100C |
165Kb/6P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VB30100C |
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB30100C-E3 |
152Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 11-Sep-13 |
|
| VB30100C-E3 |
178Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Revision: 13-Dec-16 |
|
| VB30100C-E3 |
214Kb/6P |
Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 01-Jan-2022 |
|
| VB30100C-E3/4W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Revision: 19-May-08 |
|
| VB30100C-E3/4W |
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VB30100C-E3/8W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Revision: 19-May-08 |
|
| VB30100C-E3/8W |
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VB30100C-M3 |
90Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Revision: 03-Jan-17 |
|
| VB30100C-M3_15 |
78Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 15-May-13 |
|
| VB30100CHM3 |
90Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A Revision: 03-Jan-17 |
|
| VB30100C_V01 |
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB30100S |
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 31-Jul-08 |
|
| VB30100S |
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Oct-09 |
|
| VB30100S |
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Oct-09 |
|
| VB30100S |
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 22-Dec-14 |
|
| VB30100S |
139Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Oct-09 |
|
| VB30100S-E3 |
156Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier Revision: 14-Dec-16 |
|
| VB30100S-E3 |
213Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB30100S-E3-4W |
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Oct-09 |
|
| VB30100S-E3-8W |
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Oct-09 |
|
| VB30100S-E3/4W |
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 31-Jul-08 |
|
| VB30100S-E3/4W |
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Oct-09 |
|
| VB30100S-E3/4W |
156Kb/6P |
High Voltage Trench MOS Barrier Schottky Rectifier Revision: 14-Dec-16 |
|
| VB30100S-E3/8W |
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Revision: 31-Jul-08 |
|
| VB30100S-E3/8W |
149Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 23-Oct-09 |