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V6K100DUM3H Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
V6K9G
|
DELL |
|
Original&New | 28000 | 2016 | Instock | 26-09-26 |
Inquiry
|
1
V6K100DUM3H Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
V6K100DU |
137Kb/5P |
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 1.5 A Revision: 27-Jul-2018 |
| V6K100DU |
138Kb/5P |
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| V6K100DU-M3/H |
137Kb/5P |
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 1.5 A Revision: 27-Jul-2018 |
|
| V6K100DU-M3/I |
137Kb/5P |
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 1.5 A Revision: 27-Jul-2018 |
|
| V6K100DUHM3/H |
137Kb/5P |
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 1.5 A Revision: 27-Jul-2018 |
|
| V6K100DUHM3/I |
137Kb/5P |
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 1.5 A Revision: 27-Jul-2018 |
|
| V6K100DU_V01 |
138Kb/5P |
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |