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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| TC58NVGOS3AFT05 | TOSHIBA |
|
TSOP | 28000 | 2016 | Instock | 26-09-18 |
Inquiry
|
1
TC58NVGOS3AFT05 Datasheet
| Mfg | Part # | Datasheet | Description |
 Toshiba Semiconduct... |
TC58NVG0S3AFT05 |
559Kb/33P |
1 GBIT (128M 횞 8 BITS) CMOS NAND EEPROM |
| TC58NVG0S3ETA00 |
486Kb/65P |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
| TC58NVG0S3HBAI4 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
 KIOXIA Corporation |
TC58NVG0S3HBAI4 |
456Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NVG0S3HBAI4 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NVG0S3HBAI4 |
2Mb/20P |
Flash Memory Mar. 2016 |
|
| TC58NVG0S3HBAI6 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
|
KIOXIA Corporation |
TC58NVG0S3HBAI6 |
499Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NVG0S3HBAI6 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NVG0S3HBAI6 |
2Mb/20P |
Flash Memory Mar. 2016 |
|
| TC58NVG0S3HTA00 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
|
KIOXIA Corporation |
TC58NVG0S3HTA00 |
448Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NVG0S3HTA00 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NVG0S3HTA00 |
2Mb/20P |
Flash Memory Mar. 2016 |
|
| TC58NVG0S3HTAI0 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
|
KIOXIA Corporation |
TC58NVG0S3HTAI0 |
469Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NVG0S3HTAI0 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NVG0S3HTAI0 |
2Mb/20P |
Flash Memory Mar. 2016 |
|
| TC58NVG1S3BFT00 |
315Kb/37P |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
| TC58NVG1S3EBAI4 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
| TC58NVG1S3ETA00 |
497Kb/65P |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM | |
| TC58NVG1S3ETA00 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
| TC58NVG1S3ETAI0 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
|
KIOXIA Corporation |
TC58NVG1S3HBAI4 |
538Kb/66P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NVG1S3HBAI4 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NVG1S3HBAI4 |
2Mb/20P |
Flash Memory Mar. 2016 |
|
| TC58NVG1S3HBAI6 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) | |
|
KIOXIA Corporation |
TC58NVG1S3HBAI6 |
575Kb/66P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Toshiba Semiconduct... |
TC58NVG1S3HBAI6 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NVG1S3HBAI6 |
2Mb/20P |
Flash Memory Mar. 2016 |