| Mfg |
Part # |
Datasheet |
Description |
 Toshiba Semiconduct... |
TC58NVG2S0FBAI4 |
679Kb/71P |
4 GBIT (512M X 8 BIT) CMOS NAND E2 PROM 2012-09-01 |
| TC58NVG2S0FTA00 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) |
| TC58NVG2S0FTAI0 |
527Kb/71P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM 2012-09-01 |
 KIOXIA Corporation |
TC58NVG2S0HBAI4 |
538Kb/66P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
 Toshiba Semiconduct... |
TC58NVG2S0HBAI4 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NVG2S0HBAI4 |
2Mb/20P |
Flash Memory Mar. 2016 |
 KIOXIA Corporation |
TC58NVG2S0HBAI6 |
1Mb/66P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
 Toshiba Semiconduct... |
TC58NVG2S0HBAI6 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NVG2S0HBAI6 |
2Mb/20P |
Flash Memory Mar. 2016 |
 KIOXIA Corporation |
TC58NVG2S0HTA00 |
540Kb/66P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
 Toshiba Semiconduct... |
TC58NVG2S0HTA00 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NVG2S0HTA00 |
2Mb/20P |
Flash Memory Mar. 2016 |
 KIOXIA Corporation |
TC58NVG2S0HTAI0 |
541Kb/66P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
 Toshiba Semiconduct... |
TC58NVG2S0HTAI0 |
868Kb/2P |
SLC NAND & BENAND Reliability and Performance |
| TC58NVG2S0HTAI0 |
2Mb/20P |
Flash Memory Mar. 2016 |
| TC58NVG2S3EBAI5 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) |
| TC58NVG2S3ETA00 |
499Kb/70P |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S3ETA00 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) |
| TC58NVG2S3ETAI0 |
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity) |