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QS888620P Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
QS8886-20P
|
QSI |
|
DIP-24 | 7850 | 2016 | Instock | 26-10-08 |
Inquiry
|
1
QS888620P Datasheet
| Mfg | Part # | Datasheet | Description |
 Rohm |
QS8F2 |
1Mb/7P |
1.5V Drive Pch MOSFET + PNP TRANSISTOR |
| QS8J1 |
190Kb/6P |
1.5V Drive Pch+Pch MOSFET | |
| QS8J11 |
1Mb/7P |
1.5V Drive Pch + Pch MOSFET | |
| QS8J12 |
1Mb/7P |
1.5V Drive Pch + Pch MOSFET | |
| QS8J13 |
2Mb/12P |
Small Surface Mount Package | |
| QS8J2 |
377Kb/6P |
1.5V Drive Pch MOSFET | |
| QS8J4 |
345Kb/6P |
4V Drive Pch + Pch MOSFET | |
| QS8J4FRA |
1Mb/14P |
Middle Power MOSFET | |
| QS8J4HZG |
2Mb/15P |
-30V Pch + Pch Small Signal MOSFET | |
| QS8J5 |
285Kb/6P |
4V Drive Pch + Pch MOSFET | |
| QS8K11 |
1Mb/7P |
4V Drive Nch + Nch MOSFET | |
| QS8K12 |
1Mb/7P |
4V Drive Nch + Nch MOSFET | |
| QS8K13 |
1Mb/7P |
4V Drive Nch + Nch MOSFET | |
| QS8K2 |
374Kb/6P |
2.5V Drive Nch MOSFET | |
| QS8K21 |
230Kb/6P |
4V Drive Nch + Nch MOSFET | |
| QS8K2FRA |
1Mb/14P |
30V Nch + Nch Middle Power MOSFET | |
| QS8K2HZG |
2Mb/15P |
30V Nch+Nch Small Signal MOSFET | |
| QS8K51 |
2Mb/13P |
100V Nch+Nch Small Signal MOSFET | |
| QS8M11 |
1Mb/9P |
4V Drive Nch + Pch MOSFET | |
 Unisonic Technologi... |
QS8M11 |
218Kb/6P |
DUAL ENHANCEMENT MODE |
| QS8M11G-S08-R |
218Kb/6P |
DUAL ENHANCEMENT MODE | |
| QS8M11G-S08-T |
218Kb/6P |
DUAL ENHANCEMENT MODE | |
| QS8M11L-S08-R |
218Kb/6P |
DUAL ENHANCEMENT MODE | |
| QS8M11L-S08-T |
218Kb/6P |
DUAL ENHANCEMENT MODE | |
 SHENZHEN DOINGTER S... |
QS8M11L-S08-T |
3Mb/8P |
N-Channel and P-Channel MOSFET useadvanced trench Technology |
|
Rohm |
QS8M12 |
1Mb/11P |
4V Drive Nch + Pch MOSFET |
| QS8M12TCR |
743Kb/11P |
4V Drive Nch Pch MOSFET | |
| QS8M13 |
1Mb/11P |
4V Drive Nch + Pch MOSFET | |
| QS8M51 |
1Mb/11P |
4V Drive Nch + Pch MOSFET | |
| QS8M51FRA |
2Mb/22P |
Middle Power MOSFET |