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PHT45016 Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
PHT4008
|
NIEC |
|
OriginalNew | 1850 | 2016 | Instock | 26-10-11 |
Inquiry
|
|
PHT4NQ10T
|
NXP |
|
SOT-223 | 68362 | 20+PB | Pb-Free | 26-10-11 |
Inquiry
|
|
PHT4NQ10LT
|
NXP |
|
SOT223 | 7301 | 20+PB | Pb-Free | 26-10-11 |
Inquiry
|
| PHT4NQ10T135 | NXPSEMI |
|
Originalnew | 30000 | 2016 | Instock | 26-10-11 |
Inquiry
|
1
PHT45016 Datasheet
| Mfg | Part # | Datasheet | Description |
 Nihon Inter Electro... |
PHT40012 |
287Kb/5P |
THYRISTOR MODULE 400A / 1200V to 1600V |
| PHT40012 |
236Kb/4P |
400A Avg 1200~1600 Volts | |
| PHT40012_1 |
236Kb/4P |
400A Avg 1200~1600 Volts | |
| PHT40016 |
287Kb/5P |
THYRISTOR MODULE 400A / 1200V to 1600V | |
| PHT40016 |
236Kb/4P |
400A Avg 1200~1600 Volts | |
| PHT4008 |
289Kb/5P |
THYRISTOR MODULE 400A / 800V | |
| PHT4008 |
243Kb/4P |
400A Avg 800 Volts | |
| PHT4008_1 |
243Kb/4P |
400A Avg 800 Volts | |
| PHT400N16 |
803Kb/4P |
THYRISTOR | |
 Kyocera Kinseki Cor... |
PHT400N16 |
854Kb/4P |
Thyristor |
 National Instrument... |
PHT400N16_15 |
803Kb/4P |
THYRISTOR |
|
Nihon Inter Electro... |
PHT400N8 |
790Kb/4P |
THYRISTOR |
|
Kyocera Kinseki Cor... |
PHT400N8 |
823Kb/4P |
Thyristor |
|
National Instrument... |
PHT400N8_15 |
790Kb/4P |
THYRISTOR |
 Teledyne Technologi... |
PHT41410B |
142Kb/2P |
Up to 6 GHz Low Noise Silicon Bipolar Transistor |
| PHT41435B |
108Kb/2P |
Up to 6 GHz Low Noise Silicon Bipolar Transistor | |
| PHT41470B |
197Kb/2P |
Up to 6 GHz Low Noise Silicon Bipolar Transistor | |
 NXP Semiconductors |
PHT4NQ10LT |
347Kb/13P |
N-channel enhancement mode field-effect transistor Rev. 01-11 September 2000 |
 VBsemi Electronics ... |
PHT4NQ10LT |
977Kb/6P |
N-Channel 100-V (D-S) MOSFET |
 Nexperia B.V. All r... |
PHT4NQ10LT |
440Kb/14P |
N-channel TrenchMOS logic level FET Rev. 2 - 28 October 2011 |
 NXP Semiconductors |
PHT4NQ10LT-135 |
184Kb/13P |
N-channel TrenchMOS logic level FET Rev. 2-28 October 2011 |
| PHT4NQ10T |
351Kb/13P |
N-channel enhancement mode field-effect transistor Rev. 01-31 July 2000 |
|
|
VBsemi Electronics ... |
PHT4NQ10T |
977Kb/6P |
N-Channel 100-V (D-S) MOSFET |
|
Nexperia B.V. All r... |
PHT4NQ10T |
393Kb/13P |
TrenchMOS™ standard level FET Rev. 02 - 2 May 2002 |