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PDTC123JTQVL Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
PDTC123JT
|
NXP |
|
PDTC123JT | 84000 | 20+PB | Pb-Free | 26-09-26 |
Inquiry
|
|
PDTC123JT215
|
NXPSEMI |
|
Originalnew | 30000 | 2016 | Instock | 26-09-26 |
Inquiry
|
1
PDTC123JTQVL Datasheet
| Mfg | Part # | Datasheet | Description |
 NXP Semiconductors |
PDTC123JT |
66Kb/8P |
NPN resistor-equipped transistor 1999 May 18 |
| PDTC123JT |
92Kb/14P |
NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM 2004 Aug 13 |
|
| PDTC123JT |
948Kb/12P |
Low VCEsat (BISS) transistors May 2006 |
|
| PDTC123JT |
181Kb/14P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓 2004 Aug 13 |
|
 Nexperia B.V. All r... |
PDTC123JT |
809Kb/12P |
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ 1 April 2023 |
| PDTC123JT |
1Mb/18P |
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Rev. 5 - 21 December 2011 |
|
| PDTC123JT-Q |
228Kb/12P |
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ 7 March 2022 |