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PDTC123ET215 Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| PDTC123ET215 | Nexperia |
|
3000 | 1512000 | 20+PB | Pb-Free | 26-09-26 |
Inquiry
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1
PDTC123ET215 Datasheet
| Mfg | Part # | Datasheet | Description |
 NXP Semiconductors |
PDTC123ET |
50Kb/8P |
NPN resistor-equipped transistor 1999 May 21 |
| PDTC123ET |
948Kb/12P |
Low VCEsat (BISS) transistors May 2006 |
|
| PDTC123ET |
91Kb/14P |
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm 2004 Aug 06 |
|
| PDTC123ET |
188Kb/14P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓 2004 Aug 06 |
|
 Nexperia B.V. All r... |
PDTC123ET |
420Kb/15P |
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 2004 Aug |
| PDTC123ET |
421Kb/15P |
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 2004 Aug 02 |
|
| PDTC123ET-Q |
184Kb/7P |
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ 16 October 2024 |