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NE5531079AT1AREEL Search results
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info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| NE5531079A-A | RENESAS |
|
79A | 70 | 20+PB | Pb-Free | 26-09-26 |
Inquiry
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1
NE5531079AT1AREEL Datasheet
| Mfg | Part # | Datasheet | Description |
 California Eastern ... |
NE5531079A |
382Kb/8P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS |
 Renesas Technology ... |
NE5531079A |
240Kb/11P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS |
|
California Eastern ... |
NE5531079A-A |
382Kb/8P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS |
| NE5531079A-T1 |
382Kb/8P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | |
|
Renesas Technology ... |
NE5531079A-T1 |
240Kb/11P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS |
|
California Eastern ... |
NE5531079A-T1-A |
382Kb/8P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS |
| NE5531079A-T1A |
382Kb/8P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | |
|
Renesas Technology ... |
NE5531079A-T1A |
240Kb/11P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS |
|
California Eastern ... |
NE5531079A-T1A-A |
382Kb/8P |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS |