Engilsh
中文
한국어
Deutsch
日本語
Русский
Español
Français
Italiano
Português
polski
Tiếng Việt
GA26CV12B Search results
Premium Supplier
Supplier
ANRIC ELECTRONICS CO.,LTD.
MAINtron Electronics Limited.
UnitronixElectronics
TIMICOMM ELECTRONICS LIMITED
Microtranik_Components.,Inc
Microtranik+Components
MAINtron Electronics Co.,Ltd.
European Union IC Industry Co.
Evatronix(HK) Electronics Trade Inc
Microtranik,Components,Inc.
Transcrui Microcircuit Corporation
RENXIM Electronics Inc
ANRIC Int＇l Electronics Limited
Timicomm Electronics Limited
Semilex Electronics
fenyang electronics co.,ltd
Fengyangxin Technology ( HK ) Co.,Ltd
fenkey electronics co.,ltd
Evergreen Electronics Co.,Ltd
CosmoTek Electronic Limited
SANKEY SHARE CO.,LIMITED
IC Agent Electronics Ins
SANKEY SHARE CO.,LIMITED
KANKEY ELECTRONICS CO.,LTD
KE XING ELECTRONICS CO.,LTD
Premium B
Total: 1
( 1/1 Page)
info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
GA26CV12B
|
|
GMT | 8500 | 2016 | Instock | 26-09-19 |
Inquiry
|
1
GA26CV12B Datasheet
| Mfg | Part # | Datasheet | Description |
 Microsemi Corporati... |
GA200 |
140Kb/3P |
SCRs Nanosecond Switching, Planar |
 Digitron Semiconduc... |
GA200 |
173Kb/4P |
SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR |
|
Microsemi Corporati... |
GA200A |
140Kb/3P |
SCRs Nanosecond Switching, Planar |
|
Digitron Semiconduc... |
GA200A |
173Kb/4P |
SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR |
 International Recti... |
GA200HS60S |
101Kb/6P |
HALF-BRIDGE IGBT INT-A-PAK |
| GA200HS60S1 |
67Kb/6P |
HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT | |
 Vishay Siliconix |
GA200HS60S1PBF |
128Kb/6P |
"Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 200 A Revision: 03-May-10 |
|
International Recti... |
GA200NS61U |
164Kb/9P |
High Side Switch Chopper Module Ultra-Fast Speed IGBT |
| GA200SA60S |
201Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR | |
| GA200SA60S |
322Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR | |
|
Vishay Siliconix |
GA200SA60S |
182Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Revision: 22-Jul-10 |
|
International Recti... |
GA200SA60SP |
322Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Vishay Siliconix |
GA200SA60SP |
182Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Revision: 22-Jul-10 |
| GA200SA60SP |
181Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 02-Oct-12 |
|
| GA200SA60SP_V01 |
181Kb/9P |
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A 02-Oct-12 |
|
|
International Recti... |
GA200SA60U |
197Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Vishay Siliconix |
GA200SA60UP |
153Kb/8P |
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A Revision: 26-Oct-11 |
|
International Recti... |
GA200TD120U |
299Kb/10P |
HALF-BRIDGE IGBT DOUBLE INT-A-PAK |
| GA200TS60U |
303Kb/10P |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT | |
|
Vishay Siliconix |
GA200TS60UPBF |
239Kb/9P |
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A Revision: 04-May-10 |
|
International Recti... |
GA200TS60UX |
205Kb/9P |
Ultra-FastTM Speed IGBT |
|
Microsemi Corporati... |
GA201 |
140Kb/3P |
SCRs Nanosecond Switching, Planar |
|
Digitron Semiconduc... |
GA201 |
173Kb/4P |
SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR |
|
Microsemi Corporati... |
GA201A |
140Kb/3P |
SCRs Nanosecond Switching, Planar |
|
Digitron Semiconduc... |
GA201A |
173Kb/4P |
SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR |
 GeneSiC Semiconduct... |
GA20JT06-CAL |
438Kb/7P |
Normally ??OFF Silicon Carbide Junction Transistor |
| GA20JT06-CAL_15 |
804Kb/10P |
Silicon Carbide Junction Transistor | |
| GA20JT12-247 |
1Mb/12P |
Normally ??OFF Silicon Carbide Junction Transistor | |
| GA20JT12-247_15 |
1Mb/12P |
OFF Silicon Carbide Junction Transistor | |
| GA20JT12-263 |
927Kb/12P |
Normally ??OFF Silicon Carbide Junction Transistor |