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G4BTB502M Search results
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info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| G4BTB501 | smd |
|
SMD | 2100 | 20+PB | Pb-Free | 26-10-06 |
Inquiry
|
1
G4BTB502M Datasheet
| Mfg | Part # | Datasheet | Description |
 General Semiconduct... |
G4B |
52Kb/2P |
GLASS PASSIVATED JUNCTION RECTIFIER |
 Omron Electronics L... |
G4B |
137Kb/5P |
General Purpose Relay |
| G4B-112T-C-US |
137Kb/5P |
General Purpose Relay | |
| G4B-112T-US |
137Kb/5P |
General Purpose Relay | |
| G4B-112T1-C-US |
137Kb/5P |
General Purpose Relay | |
| G4B-112T1-FD-C-US-RP |
137Kb/5P |
General Purpose Relay | |
| G4B-112T1-FD-US-RP |
137Kb/5P |
General Purpose Relay | |
| G4B-112T1-FD-US-RPAC24 |
237Kb/5P |
General Purpose Relay | |
| G4B-112T1-US |
137Kb/5P |
General Purpose Relay | |
| G4B-112TP-C-US |
137Kb/5P |
General Purpose Relay | |
| G4B-112TP-FD-C-US-RP |
137Kb/5P |
General Purpose Relay | |
| G4B-112TP-FD-US-RP |
137Kb/5P |
General Purpose Relay | |
| G4B-112TP-US |
137Kb/5P |
General Purpose Relay | |
 International Recti... |
G4BC30KD |
196Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
| G4BC30UD |
234Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) | |
| G4BC30W |
139Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) | |
| G4BC30W |
275Kb/9P |
INSULATED GATE BIPOLAR TRANSISTOR | |
| G4BC30W |
287Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR | |
| G4BC40S |
157Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) | |
| G4BC40U |
169Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A) |