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F22V107CFN Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
F22V10-7CFN
|
TI |
|
PLCC28 | 12000 | 2016 | Instock | 26-10-02 |
Inquiry
|
1
F22V107CFN Datasheet
| Mfg | Part # | Datasheet | Description |
 Microchip Technolog... |
F22 |
3Mb/416P |
16-Bit General Purpose Microcontrollers with 256-Kbyte Flash and 16-Kbyte RAM in Low Pin Count Packages 2016-2018 |
 Mitsumi Electronics... |
F22-009-210-AGGE |
192Kb/2P |
SD Memory Card Connectors |
 Polyfet RF Devices |
F2201 |
35Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? |
 Integrated Technolo... |
F2201 |
173Kb/7P |
SAW Bandpass Filter |
|
Polyfet RF Devices |
F2201S |
35Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F2202 |
37Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? | |
|
Integrated Technolo... |
F2202 |
178Kb/7P |
SAW Bandpass Filter |
 List of Unclassifed... |
F2202S |
35Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER |
|
Integrated Technolo... |
F2204 |
248Kb/7P |
SAW Bandpass Filter F2204 |
|
Polyfet RF Devices |
F2211 |
35Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? |
| F2212 |
35Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? | |
| F2213 |
36Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? | |
 Vishay Siliconix |
F221K33Y5RR6.K7 |
420Kb/7P |
Ceramic Disc Capacitors Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC Revision: 07-Jan-10 |
| F221K33Y5RR6.K7. |
420Kb/7P |
Ceramic Disc Capacitors Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC Revision: 07-Jan-10 |
|
 Hamamatsu Corporati... |
F2223-21SH |
110Kb/2P |
MCP ASSEMBLY |
|
Vishay Siliconix |
F222K69Y5RP63K7. |
420Kb/7P |
Ceramic Disc Capacitors Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC Revision: 07-Jan-10 |
| F222K75Y5RR83K0 |
420Kb/7P |
Ceramic Disc Capacitors Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC Revision: 07-Jan-10 |
|
| F222K75Y5RR83K0. |
420Kb/7P |
Ceramic Disc Capacitors Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC Revision: 07-Jan-10 |
|
 Littelfuse |
F2234 |
178Kb/2P |
ATO Blade Fuse Rated 32V |
| F2234-ND |
178Kb/2P |
ATO Blade Fuse Rated 32V | |
|
Polyfet RF Devices |
F2246 |
33Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? |
| F2247 |
33Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? | |
| F2248 |
35Kb/2P |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? | |
 Integrated Device T... |
F2250 |
2Mb/24P |
Voltage Variable RF Attenuator |
| F2250 |
2Mb/24P |
Voltage Variable RF Attenuator | |
| F2250 |
2Mb/24P |
Voltage Variable RF Attenuator | |
 Renesas Technology ... |
F2250 |
2Mb/25P |
Low Insertion Loss: 1.4dB @ 2000MHz 33.6dB Attenuation Range |
| F2250 |
2Mb/27P |
Voltage Variable RF Attenuator 1MHz to 3000MHz May 7, 2021 |
|
|
Integrated Device T... |
F2250NLGI |
94Kb/3P |
PRODUCT/PROCESS CHANGE NOTICE (PCN) |
| F2250NLGI8 |
94Kb/3P |
PRODUCT/PROCESS CHANGE NOTICE (PCN) |