| Mfg |
Part # |
Datasheet |
Description |
 HB Electronic Compo... |
DO2 |
68Kb/1P |
Heatsink DOx |
 Japan Aviation Elec... |
DO2-22-26P-10000 |
177Kb/1P |
STRAIGHT PLUG |
| DO2-22-26P-PKG100 |
177Kb/1P |
STRAIGHT PLUG |
| DO2-22-26S-10000 |
184Kb/1P |
RELAY PLUG |
| DO2-22-26S-PKG100 |
184Kb/1P |
RELAY PLUG |
 Microchip Technolog... |
DO20 |
3Mb/416P |
16-Bit General Purpose Microcontrollers with 256-Kbyte Flash and 16-Kbyte RAM in Low Pin Count Packages 2016-2018 |
 Coilcraft lnc. |
DO2010-104ML |
196Kb/2P |
SMT Power Inductors |
| DO2010-123ML |
196Kb/2P |
SMT Power Inductors |
| DO2010-153ML |
196Kb/2P |
SMT Power Inductors |
| DO2010-223ML |
196Kb/2P |
SMT Power Inductors |
| DO2010-224ML |
196Kb/2P |
SMT Power Inductors |
| DO2010-333ML |
196Kb/2P |
SMT Power Inductors |
| DO2010-473ML |
196Kb/2P |
SMT Power Inductors |
| DO2010-683ML |
196Kb/2P |
SMT Power Inductors |
| DO2010_13 |
115Kb/2P |
SMT Power Inductors ??DO2010 |
 List of Unclassifed... |
DO204AL |
13Kb/1P |
CASE STYLE AND DIMENSIONS |
 SHENZHEN DOINGTER S... |
DO2301B |
1Mb/4P |
P-Channel MOSFET uses advanced trench technology |
| DO2301C |
1Mb/5P |
P-Channel MOSFET uses advanced trench technology |
| DO2301E |
1Mb/5P |
P-Channel MOSFET uses advanced trench technology |
| DO2302C |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
| DO2302F |
1Mb/3P |
N-Channel MOSFET uses advanced trench technology |
| DO2305 |
2Mb/5P |
P-Channel MOSFET uses advanced trench technology |
| DO2305SA |
1Mb/5P |
P-Channel MOSFET uses advanced trench technology |
| DO2318 |
1Mb/4P |
N-Channel MOSFET uses advanced trench technology |
 Microchip Technolog... |
DO26 |
3Mb/416P |
16-Bit General Purpose Microcontrollers with 256-Kbyte Flash and 16-Kbyte RAM in Low Pin Count Packages 2016-2018 |