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DFE252010F1R0M Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| DFE252010P-2R2M | TOKO |
|
SMD | 91299 | 2020+ | Pb-Free | 26-09-23 |
Inquiry
|
| DFE252010R-H-1R0M | TOKO |
|
SMD | 146199 | 2020+ | Pb-Free | 26-09-23 |
Inquiry
|
1
DFE252010F1R0M Datasheet
| Mfg | Part # | Datasheet | Description |
 TOKO, Inc |
DFE252010F |
229Kb/1P |
The use of Flat wire for Low DC resistance |
| DFE252010F-100M |
229Kb/1P |
The use of Flat wire for Low DC resistance | |
| DFE252010F-100M |
229Kb/1P |
Metal Alloy Inductors | |
 Murata Manufacturin... |
DFE252010F-100M |
982Kb/2P |
Inductor |
| DFE252010F-100M |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE252010F-100M# |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE252010F-100M_18 |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
|
TOKO, Inc |
DFE252010F-1R0M |
229Kb/1P |
The use of Flat wire for Low DC resistance |
| DFE252010F-1R0M |
229Kb/1P |
Metal Alloy Inductors | |
|
Murata Manufacturin... |
DFE252010F-1R0M |
982Kb/2P |
Inductor |
| DFE252010F-1R0M |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE252010F-1R0M# |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE252010F-1R0M_18 |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
|
TOKO, Inc |
DFE252010F-1R5M |
229Kb/1P |
The use of Flat wire for Low DC resistance |
| DFE252010F-1R5M |
229Kb/1P |
Metal Alloy Inductors | |
|
Murata Manufacturin... |
DFE252010F-1R5M |
982Kb/2P |
Inductor |
| DFE252010F-1R5M |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE252010F-1R5M# |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
| DFE252010F-1R5M_18 |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
|
TOKO, Inc |
DFE252010F-2R2M |
229Kb/1P |
The use of Flat wire for Low DC resistance |
| DFE252010F-2R2M |
229Kb/1P |
Metal Alloy Inductors | |
|
Murata Manufacturin... |
DFE252010F-2R2M |
982Kb/2P |
Inductor |
| DFE252010F-2R2M |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
 Texas Instruments |
DFE252010F-2R2M |
1Mb/31P |
[Old version datasheet] TPS63900 1.8-V to 5.5-V, 400-mA, 200-nA Quiescent Current Buck-Boost Converter |
|
Murata Manufacturin... |
DFE252010F-2R2M# |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% |
| DFE252010F-2R2M_18 |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% | |
|
TOKO, Inc |
DFE252010F-3R3M |
229Kb/1P |
The use of Flat wire for Low DC resistance |
| DFE252010F-3R3M |
229Kb/1P |
Metal Alloy Inductors | |
|
Murata Manufacturin... |
DFE252010F-3R3M |
982Kb/2P |
Inductor |
| DFE252010F-3R3M |
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30% |