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C5750X7S2A226M280KB Search results
Premium Supplier
Premium B
Total: 8
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info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| C5750X7S2A106KT | TDK |
|
SMD | 217005 | 2020+ | Pb-Free | 26-09-26 |
Inquiry
|
C5750X7S2A106MT
|
TDK |
|
SMD | 1358355 | 2020+ | Pb-Free | 26-09-26 |
Inquiry
|
|
C5750X7S2A106KT000N
|
TDK |
|
C5750X7S2A106KT000N | 3500 | 20+PB | Pb-Free | 26-09-26 |
Inquiry
|
|
C5750X7S2A106M230KB
|
TDK |
|
SMD | 42999 | 2020+ | Pb-Free | 26-09-26 |
Inquiry
|
| C5750X7S2A106M230KE | TDK |
|
SMD | 1358355 | 2020+ | Pb-Free | 26-09-26 |
Inquiry
|
| C5750X7S2A106MT000N | TDK |
|
SMD | 174999 | 2020+ | Pb-Free | 26-09-26 |
Inquiry
|
|
C5750X7S2A156M250KB
|
MURATA |
|
SMD2 | 3500 | 20+PB | Pb-Free | 26-09-26 |
Inquiry
|
|
C5750X7S2A156MT000N
|
TDK |
|
C5750X7S2A156MT000N | 3500 | 20+PB | Pb-Free | 26-09-26 |
Inquiry
|
1
C5750X7S2A226M280KB Datasheet
| Mfg | Part # | Datasheet | Description |
 TDK Electronics |
C5750X7S2A103M |
65Kb/5P |
Multilayer Ceramic Chip Capacitors |
| C5750X7S2A106K230KB |
138Kb/1P |
Commercial Grade ( Mid Voltage (100 to 630V) ) | |
| C5750X7S2A106K230KB_17 |
237Kb/3P |
Multilayer Ceramic Chip Capacitors | |
| C5750X7S2A106K230KE |
1Mb/12P |
MULTILAYER CERAMIC CHIP CAPACITORS | |
| C5750X7S2A106K230KE_16 |
138Kb/1P |
Commercial Grade ( Soft Termination ) | |
 Freescale Semicondu... |
C5750X7S2A106M |
437Kb/15P |
RF Power LDMOS Transistors |
|
TDK Electronics |
C5750X7S2A106M |
9Mb/64P |
2012 MLCC PRODUCT GUIDE |
 NXP Semiconductors |
C5750X7S2A106M |
634Kb/20P |
RF Power LDMOS Transistors Rev. 0, 09/2018 |
| C5750X7S2A106M |
364Kb/8P |
RF Power GaN Transistor Rev. 1, 05/2021 |
|
| C5750X7S2A106M |
374Kb/8P |
RF Power GaN Transistor Rev. 1, 01/2021 |
|
| C5750X7S2A106M |
364Kb/9P |
RF Power LDMOS Transistor | |
| C5750X7S2A106M |
491Kb/23P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 2, 10/2022 |
|
| C5750X7S2A106M |
414Kb/18P |
1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Rev. 1, 08/2020 |
|
| C5750X7S2A106M |
557Kb/16P |
N--Channel Enhancement--Mode Lateral MOSFETs Rev. 1, 12/2013 |
|
| C5750X7S2A106M |
461Kb/13P |
RF Power LDMOS Transistor Rev. 2, 3/2013 |
|
| C5750X7S2A106M |
543Kb/17P |
RF Power LDMOS Transistors Rev. 3, 3/2014 |
|
|
TDK Electronics |
C5750X7S2A106M230KB |
138Kb/1P |
Commercial Grade ( Mid Voltage (100 to 630V) ) |
|
NXP Semiconductors |
C5750X7S2A106M230KB |
319Kb/13P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 09/2018 |
| C5750X7S2A106M230KB |
221Kb/10P |
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Rev. 2, 02/2021 |
|
| C5750X7S2A106M230KB |
188Kb/9P |
RF Power GaN Transistor | |
| C5750X7S2A106M230KB |
221Kb/8P |
RF Power GaN Transistor | |
| C5750X7S2A106M230KB |
185Kb/8P |
RF Power GaN Transistor | |
| C5750X7S2A106M230KB |
294Kb/8P |
RF Power GaN Transistor | |
| C5750X7S2A106M230KB |
344Kb/8P |
RF Power GaN Transistor | |
| C5750X7S2A106M230KB |
831Kb/16P |
RF Power LDMOS Transistor | |
| C5750X7S2A106M230KB |
319Kb/8P |
RF Power LDMOS Transistor | |
| C5750X7S2A106M230KB |
389Kb/16P |
RF Power LDMOS Transistor | |
| C5750X7S2A106M230KB |
690Kb/8P |
RF Power LDMOS Transistor | |
| C5750X7S2A106M230KB |
255Kb/8P |
RF Power LDMOS Transistor Rev. 0, 02/2019 |
|
| C5750X7S2A106M230KB |
362Kb/20P |
RF Power LDMOS Transistor Rev. 2, 05/2022 |