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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
C0603C103J5RAC
|
KEMET |
|
Original&New | 28000 | 2016 | Instock | 26-10-02 |
Inquiry
|
|
C0603C103J5RAC7411
|
KEMET |
|
SMD | 360999 | 2020+ | Pb-Free | 26-10-02 |
Inquiry
|
|
C0603C103J5RAC7867
|
KEMET |
|
NA | 19901 | 20+PB | Pb-Free | 26-10-02 |
Inquiry
|
| C0603C103J5RAC7867 | KEMET |
|
SMD | 10479 | 20+PB | Pb-Free | 26-10-02 |
Inquiry
|
1
C0603C103J5RAC Datasheet
| Mfg | Part # | Datasheet | Description |
 Kemet Corporation |
C0603C103J5RAC |
39Kb/2P |
CERAMIC CHIP/STANDARD |
 NXP Semiconductors |
C0603C103J5RAC |
460Kb/21P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 10/2014 |
| C0603C103J5RAC |
456Kb/20P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 10/2014 |
|
| C0603C103J5RAC |
478Kb/24P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 6, 12/2017 |
|
| C0603C103J5RAC |
438Kb/14P |
Heterojunction Bipolar Transistor (InGaP HBT) Rev. 7, 9/2014 |
|
| C0603C103J5RAC |
403Kb/14P |
Heterojunction Bipolar Transistor (InGaP HBT) Rev. 7, 9/2014 |
|
| C0603C103J5RAC |
413Kb/14P |
Heterojunction Bipolar Transistor (InGaP HBT) Rev. 7, 9/2014 |
|
| C0603C103J5RAC |
364Kb/15P |
Heterojunction Bipolar Transistor (InGaP HBT) Rev. 5, 3/2008 |
|
| C0603C103J5RAC |
416Kb/14P |
Heterojunction Bipolar Transistor (InGaP HBT) Rev. 7, 9/2014 |
|
| C0603C103J5RAC |
423Kb/14P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 8, 9/2014 |
|
| C0603C103J5RAC |
403Kb/15P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 7, 2/2012 |
|
| C0603C103J5RAC |
181Kb/9P |
Gallium Arsenide CATV Integrated Amplifier Module Rev. 8, 3/2007 |
|
| C0603C103J5RAC |
388Kb/14P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 10/2014 |
|
| C0603C103J5RAC |
493Kb/15P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 12, 9/2014 |
|
| C0603C103J5RAC |
640Kb/17P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 9/2014 |
|
| C0603C103J5RAC |
389Kb/14P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 4, 9/2014 |
|
| C0603C103J5RAC |
916Kb/21P |
RF Power Field Effect Transistors Rev. 0, 3/2009 |
|
| C0603C103J5RAC |
353Kb/23P |
InGaP HBT Linear Amplifier Rev. 2 - 4 April 2024 |
|
| C0603C103J5RAC-TU |
1Mb/22P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 1, 10/2010 |
|
|
Kemet Corporation |
C0603C103J5RAC7411 |
60Kb/1P |
SMD Comm X7R, Ceramic, 0.01 uF, 5%, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Class II, 0603 |
| C0603C103J5RACAUTO |
60Kb/1P |
SMD Auto X7R, Ceramic, 0.01 uF, 5%, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Automotive Grade, 0603 | |
| C0603C103J5RACTU |
71Kb/1P |
Ceramic, Commercial-(CxxxxC), 0.01 uF, 5%, 50 V, 0603, X7R, SMD, MLCC, Temperature Stable, Class II |