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BAW101E6327HTSA1 Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| BAW101E6327HTSA1 | Infineon |
|
19376 | 20+PB | Pb-Free | 26-09-19 |
Inquiry
|
|
| BAW101E6327HTSA1 | SSCI |
|
SOT143 | 14000 | 20+PB | Pb-Free | 26-09-19 |
Inquiry
|
1
BAW101E6327HTSA1 Datasheet
| Mfg | Part # | Datasheet | Description |
 Siemens Semiconduct... |
BAW101 |
61Kb/3P |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
 Central Semiconduct... |
BAW101 |
152Kb/2P |
DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES |
 Infineon Technologi... |
BAW101 |
429Kb/3P |
Silicon Switching Diode Sep-24-2003 |
 Guangdong Kexin Ind... |
BAW101 |
38Kb/2P |
Silicon Switching Diode Array |
|
Infineon Technologi... |
BAW101 |
62Kb/5P |
Silicon Switching Diode 2007-04-20 |
 Shenzhen Luguang El... |
BAW101 |
160Kb/5P |
High Voltage Double Diode |
 NXP Semiconductors |
BAW101 |
136Kb/9P |
High voltage double diode 2003 May 13 |
 Diodes Incorporated |
BAW101 |
79Kb/4P |
Fast Switching Speed |
| BAW101 |
277Kb/5P |
DUAL SURFACE MOUNT SWITCHING DIODE | |
 Nexperia B.V. All r... |
BAW101 |
311Kb/10P |
High voltage double diode 2003 May 13 |
|
NXP Semiconductors |
BAW101-215 |
136Kb/9P |
High voltage double diode 2003 May 13 |
|
Diodes Incorporated |
BAW101-7 |
79Kb/4P |
Fast Switching Speed |
| BAW101-7 |
277Kb/5P |
DUAL SURFACE MOUNT SWITCHING DIODE | |
| BAW101Q |
300Kb/4P |
DUAL SURFACE MOUNT SWITCHING DIODE | |
| BAW101Q-7 |
300Kb/4P |
DUAL SURFACE MOUNT SWITCHING DIODE | |
|
NXP Semiconductors |
BAW101S |
72Kb/10P |
High voltage double diode 2003 May 13 |
|
Guangdong Kexin Ind... |
BAW101S |
42Kb/2P |
High Voltage Double Diode |
 NXP Semiconductors |
BAW101S |
128Kb/9P |
High voltage double diode 2003 May 13 |
|
Diodes Incorporated |
BAW101S |
97Kb/4P |
HIGH VOLTAGE DUAL SWITCHING DIODE |
|
Nexperia B.V. All r... |
BAW101S |
225Kb/9P |
High voltage double diode 1 October 2022 |
|
Diodes Incorporated |
BAW101S-7 |
97Kb/4P |
HIGH VOLTAGE DUAL SWITCHING DIODE |
|
Nexperia B.V. All r... |
BAW101S-Q |
214Kb/10P |
High voltage double diode 14 September 2021 |
|
Diodes Incorporated |
BAW101S_15 |
97Kb/4P |
HIGH VOLTAGE DUAL SWITCHING DIODE |
|
NXP Semiconductors |
BAW101S_15 |
128Kb/9P |
High voltage double diode 2003 May 13 |
|
Diodes Incorporated |
BAW101V |
100Kb/4P |
HIGH VOLTAGE DUAL SWITCHING DIODE |
| BAW101V-7 |
100Kb/4P |
HIGH VOLTAGE DUAL SWITCHING DIODE | |
| BAW101V_15 |
100Kb/4P |
HIGH VOLTAGE DUAL SWITCHING DIODE | |
|
Infineon Technologi... |
BAW101_07 |
62Kb/5P |
Silicon Switching Diode 2007-04-20 |
|
Central Semiconduct... |
BAW101_11 |
428Kb/2P |
SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES |
|
Diodes Incorporated |
BAW101_15 |
79Kb/4P |
DUAL SURFACE MOUNT SWITCHING DIODE |