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A2G20219 Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
A2G20219
|
|
SOP20W | 12000 | 2016 | Instock | 26-09-17 |
Inquiry
|
1
A2G20219 Datasheet
| Mfg | Part # | Datasheet | Description |
 NXP Semiconductors |
A2G22S160-01S |
815Kb/18P |
RF Power GaN Transistor Rev. 0, 5/2015 |
| A2G22S160-01S |
761Kb/18P |
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Rev. 1, 01/2022 |
|
| A2G22S160-01SR3 |
815Kb/18P |
RF Power GaN Transistor Rev. 0, 5/2015 |
|
| A2G22S160-01SR3 |
761Kb/18P |
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Rev. 1, 01/2022 |
|
| A2G22S190-01S |
188Kb/9P |
RF Power GaN Transistor | |
| A2G22S190-01SR3 |
188Kb/9P |
RF Power GaN Transistor | |
| A2G22S251-01S |
297Kb/13P |
RF Power GaN Transistor Rev. 0, 5/2016 |
|
| A2G22S251-01SR3 |
297Kb/13P |
RF Power GaN Transistor Rev. 0, 5/2016 |
|
| A2G26H281-04S |
270Kb/10P |
RF Power GaN Transistor Rev. 1, 02/2017 |
|
| A2G26H281-04SR3 |
270Kb/10P |
RF Power GaN Transistor Rev. 1, 02/2017 |