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100B2R1CW500XT Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| 100B2R7BT500XT | ATC |
|
SMD | 144999 | 2020+ | Pb-Free | 26-09-18 |
Inquiry
|
| 100B2R7CT500XT | ATC |
|
SMD | 3978 | 2020+ | Pb-Free | 26-09-18 |
Inquiry
|
1
100B2R1CW500XT Datasheet
| Mfg | Part # | Datasheet | Description |
 Advanced Semiconduc... |
100B2R0JP500X |
2Mb/5P |
Silicon MOSFET Technology |
 NXP Semiconductors |
100B2R2BW |
694Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006 |
| 100B2R2BW |
693Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006 |
|
|
Advanced Semiconduc... |
100B2R4JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B2R4JP500X |
1Mb/8P |
All Gold Bonding Scheme | |
|
NXP Semiconductors |
100B2R7BT500XT |
424Kb/12P |
RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Rev. 0, 02/2021 |
 Freescale Semicondu... |
100B2R7CP500X |
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
|
NXP Semiconductors |
100B2R7CP500X |
670Kb/16P |
RF LDMOS Wideband Integrated Power Amplifier Rev. 4, 5/2006 |