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100B200FT500XT Search results
Premium Supplier
Supplier
NegoICCo.
Microtranik,Components,Inc.
Transcrui Microcircuit Corporation
Evatronix(HK) Electronics Trade Inc
IC Agent Electronics Ins
Hongkong Inductors Limited
Hongkong Inductors Limited
Leading(HK) IC Distributor Limited
Evatronix(HK) Technology Limited
TIANHAO INDUSTRIAL CO.,LIMITED
Wintech Components Limited
Premium B
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info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| 100B200JT500X |
|
SMD | 41499 | 2020+ | Pb-Free | 26-09-18 |
Inquiry
|
|
| 100B200JT500XT | ATC |
|
SMD | 1878 | 2020+ | Pb-Free | 26-09-18 |
Inquiry
|
| 100B200JW500XT | WSN |
|
SMD | 195999 | 2020+ | Pb-Free | 26-09-18 |
Inquiry
|
1
100B200FT500XT Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
100B2130130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2130222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2130470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
 NXP Semiconductors |
100B220JCA500X |
763Kb/20P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006 |
| 100B220JCA500X |
955Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011 |
|
 Freescale Semicondu... |
100B220JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
Vishay Siliconix |
100B2222130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2222222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2222470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
|
Freescale Semicondu... |
100B240JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
Vishay Siliconix |
100B2470130XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
| 100B2470222XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
| 100B2470470XXXX |
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 01-Jan-2022 |
|
 Advanced Semiconduc... |
100B270JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B2R0JP500X |
2Mb/5P |
Silicon MOSFET Technology | |
|
NXP Semiconductors |
100B2R2BW |
694Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006 |
| 100B2R2BW |
693Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006 |
|
|
Advanced Semiconduc... |
100B2R4JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B2R4JP500X |
1Mb/8P |
All Gold Bonding Scheme | |
|
NXP Semiconductors |
100B2R7BT500XT |
424Kb/12P |
RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Rev. 0, 02/2021 |
|
Freescale Semicondu... |
100B2R7CP500X |
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
|
NXP Semiconductors |
100B2R7CP500X |
670Kb/16P |
RF LDMOS Wideband Integrated Power Amplifier Rev. 4, 5/2006 |