| Mfg |
Part # |
Datasheet |
Description |
 NXP Semiconductors |
100B1R0BW |
694Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006 |
| 100B1R0BW |
693Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006 |
 Freescale Semicondu... |
100B1R0JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
 Advanced Semiconduc... |
100B1R2JP500X |
1Mb/8P |
All Gold Bonding Scheme |
 Freescale Semicondu... |
100B1R5JP500X |
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs |
| 100B1R8BW |
702Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
 NXP Semiconductors |
100B1R8BW |
694Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006 |
| 100B1R8BW |
693Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006 |
| 100B1R8BW |
767Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 5, 5/2006 |