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100B10JW300XT Search results
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info
FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| 100B10JW300XT | ATC |
|
SMD | 75939 | 2020+ | Pb-Free | 26-09-18 |
Inquiry
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1
100B10JW300XT Datasheet
| Mfg | Part # | Datasheet | Description |
 NXP Semiconductors |
100B100GW |
694Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006 |
| 100B100GW |
693Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006 |
|
 Freescale Semicondu... |
100B100JCA500X |
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers |
|
NXP Semiconductors |
100B100JCA500X |
763Kb/20P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006 |
| 100B100JCA500X |
955Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011 |
|
| 100B100JT500XT |
294Kb/8P |
RF Power GaN Transistor | |
 Winchester Electron... |
100B1016P95 |
393Kb/5P |
MARC REMOVABLE PIN & SOCKET CONTACTS |
|
Freescale Semicondu... |
100B101JP500X |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
 Advanced Semiconduc... |
100B101JP500X |
2Mb/5P |
Silicon MOSFET Technology |
| 100B101JP500X |
1Mb/8P |
All Gold Bonding Scheme | |
|
NXP Semiconductors |
100B102JCA500X |
763Kb/20P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006 |
| 100B102JCA500X |
955Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011 |
|
|
Freescale Semicondu... |
100B102JP500X |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |