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08051J8R2BBTTR Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| 08051J8R2BBTTR | AVX |
|
SMD | 9999 | 2020+ | Pb-Free | 26-09-17 |
Inquiry
|
1
08051J8R2BBTTR Datasheet
| Mfg | Part # | Datasheet | Description |
 Freescale Semicondu... |
08051J0R1BBT |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| 08051J0R3BBT |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor | |
 NXP Semiconductors |
08051J0R4BBS |
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor Rev. 4, 8/2013 |
|
Freescale Semicondu... |
08051J0R4BBT |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
|
NXP Semiconductors |
08051J0R5BBS |
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor Rev. 4, 8/2013 |
| 08051J0R5BS |
726Kb/12P |
RF LDMOS Integrated Power Amplifier Rev. 3, 12/2010 |
|
|
Freescale Semicondu... |
08051J0R9BBT |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
|
NXP Semiconductors |
08051J150GBS |
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor Rev. 4, 8/2013 |
| 08051J1R0BBS |
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor Rev. 4, 8/2013 |
|
|
Freescale Semicondu... |
08051J1R0BBT |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
|
NXP Semiconductors |
08051J1R0BS |
726Kb/12P |
RF LDMOS Integrated Power Amplifier Rev. 3, 12/2010 |
|
Freescale Semicondu... |
08051J1R2BBT |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
|
NXP Semiconductors |
08051J1R5BBS |
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor Rev. 4, 8/2013 |
| 08051J2R2BS |
726Kb/12P |
RF LDMOS Integrated Power Amplifier Rev. 3, 12/2010 |
|
|
Freescale Semicondu... |
08051J3R9BBT |
132Kb/12P |
Gallium Arsenide PHEMT RF Power Field Effect Transistor |
 AVX Corporation |
08051J4R7AASTR |
1Mb/19P |
Thin-Film Technology |
| 08051J4R7AATTR |
1Mb/19P |
Thin-Film Technology | |
| 08051J4R7AAWTR |
1Mb/19P |
Thin-Film Technology | |
| 08051J4R7ABSTR |
1Mb/19P |
Thin-Film Technology | |
| 08051J4R7ABTTR |
1Mb/19P |
Thin-Film Technology | |
| 08051J4R7ABWTR |
1Mb/19P |
Thin-Film Technology | |
| 08051J4R7BASTR |
1Mb/19P |
Thin-Film Technology | |
| 08051J4R7BATTR |
1Mb/19P |
Thin-Film Technology | |
| 08051J4R7BAWTR |
1Mb/19P |
Thin-Film Technology | |
| 08051J4R7BBSTR |
1Mb/19P |
Thin-Film Technology | |
| 08051J4R7BBTTR |
1Mb/19P |
Thin-Film Technology | |
| 08051J4R7BBWTR |
1Mb/19P |
Thin-Film Technology | |
|
NXP Semiconductors |
08051J5R6BS |
726Kb/12P |
RF LDMOS Integrated Power Amplifier Rev. 3, 12/2010 |
| 08051J6R8BS |
726Kb/12P |
RF LDMOS Integrated Power Amplifier Rev. 3, 12/2010 |