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06035J0R2QBSTR Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| 06035J0R2QBSTR | AVX |
|
SMD | 279429 | 2020+ | Pb-Free | 26-10-08 |
Inquiry
|
1
06035J0R2QBSTR Datasheet
| Mfg | Part # | Datasheet | Description |
 AVX Corporation |
06035J0R1PBSTR |
340Kb/26P |
Thin-Film Technology |
 NXP Semiconductors |
06035J0R4BBS |
468Kb/15P |
Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014 |
| 06035J0R6BS |
497Kb/16P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 5, 3/2016 |
|
 TriQuint Semiconduc... |
06035J0R7ABSTR |
747Kb/8P |
Edge QAM Gain Stage |
|
NXP Semiconductors |
06035J0R7BBS |
468Kb/15P |
Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014 |
| 06035J0R8BBS |
468Kb/15P |
Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014 |
|
| 06035J0R8BBS |
571Kb/14P |
RF LDMOS Wideband Integrated Power Amplifiers | |
| 06035J0R8BS |
497Kb/16P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 5, 3/2016 |
|
| 06035J0R9BS |
497Kb/16P |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 5, 3/2016 |