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02015C331KAT2A Search results
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FEDERAL INDUSTRY CO.
Singapore
Tess@sunnlyic.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| 02015A2R0BAT2A | AVX |
|
SMD0201 | 94500 | 20+PB | Pb-Free | 26-09-20 |
Inquiry
|
| 02015J0R4ABSTR | AVX |
|
SMD | 15999 | 2020+ | Pb-Free | 26-09-20 |
Inquiry
|
| 02015J0R4PBSTR | AVX |
|
SMD | 15999 | 2020+ | Pb-Free | 26-09-20 |
Inquiry
|
| 02015.6PFC25VNPO |
|
30999 | 2020+ | Pb-Free | 26-09-20 |
Inquiry
|
1
02015C331KAT2A Datasheet
| Mfg | Part # | Datasheet | Description |
 M/A-COM Technology ... |
02015-BRF-001-A |
116Kb/2P |
2.5 Gbps Transimpedance Amplifier with AGC |
| 02015-DSH-001-G |
382Kb/21P |
Low Power CMOS Transimpedance Amplifier with Rx Pwr Mon | |
 SUYIN USA, INC. |
020151MR004S507ZU |
65Kb/1P |
VERTICAL USB DIP TYPE |
 PHOENIX CONTACT |
0201524 |
58Kb/2P |
Fixed bridge, Number of positions: 100, Color: aluminum |
| 0201595 |
45Kb/2P |
Cross connection rail, for fixed bridging of identical inputs and outputs, made of Cu, nickel-plated, 1 m long | |
 AVX Corporation |
02015A102BAT2A |
2Mb/99P |
Ceramic Chip Capacitors |
| 02015D100BAT2A |
2Mb/99P |
Ceramic Chip Capacitors | |
| 02015D107KAT2A |
787Kb/4P |
General Specifications | |
| 02015D107KAT4A |
787Kb/4P |
General Specifications | |
| 02015D107KATUA |
787Kb/4P |
General Specifications | |
| 02015D107MAT2A |
787Kb/4P |
General Specifications | |
| 02015D107MAT4A |
787Kb/4P |
General Specifications | |
| 02015D107MATUA |
787Kb/4P |
General Specifications | |
| 02015J4R7AASTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7AASTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7AASTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7AATTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7AATTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7AATTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7AAWTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7AAWTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7AAWTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7ABSTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7ABSTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7ABSTR |
217Kb/19P |
High purity of electrodes for very low and repeatable | |
| 02015J4R7ABSTR |
340Kb/26P |
Thin-Film Technology | |
| 02015J4R7ABSTR500 |
1Mb/25P |
Thin-Film Technology | |
| 02015J4R7ABTTR |
1Mb/19P |
Thin-Film Technology | |
| 02015J4R7ABTTR |
458Kb/20P |
Thin-Film Technology | |
| 02015J4R7ABTTR |
217Kb/19P |
High purity of electrodes for very low and repeatable |