| Mfg |
Part # |
Datasheet |
Description |
 M/A-COM Technology ... |
02011-BRF-001-A |
115Kb/2P |
622Mbps Transimpedance Amplifier with AGC |
| 02011-DSH-001-C |
306Kb/21P |
CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 622 Mbps |
 PHOENIX CONTACT |
0201139 |
47Kb/2P |
Insertion bridge - EB 10- 6 - 0201139 |
| 0201142 |
47Kb/2P |
Insertion bridge - EB 3- 6 - 0201142 |
| 0201155 |
46Kb/2P |
Insertion bridge - EB 2- 6 - 0201155 |
| 0201168 |
43Kb/2P |
Fixed bridge - FB 3- 6 |
| 0201184 |
43Kb/2P |
Fixed bridge - FB 10- 6 - 0201184 |
| 0201197 |
43Kb/2P |
Fixed bridge - FB 2-6 - 0201197 |
 AVX Corporation |
02011D107KAT2A |
787Kb/4P |
General Specifications |
| 02011D107KAT4A |
787Kb/4P |
General Specifications |
| 02011D107KATUA |
787Kb/4P |
General Specifications |
| 02011D107MAT2A |
787Kb/4P |
General Specifications |
| 02011D107MAT4A |
787Kb/4P |
General Specifications |
| 02011D107MATUA |
787Kb/4P |
General Specifications |
| 02011J4R7AASTR |
1Mb/19P |
Thin-Film Technology |
| 02011J4R7AASTR |
458Kb/20P |
Thin-Film Technology |
| 02011J4R7AASTR |
217Kb/19P |
High purity of electrodes for very low and repeatable |
| 02011J4R7AATTR |
1Mb/19P |
Thin-Film Technology |
| 02011J4R7AATTR |
458Kb/20P |
Thin-Film Technology |
| 02011J4R7AATTR |
217Kb/19P |
High purity of electrodes for very low and repeatable |
| 02011J4R7AAWTR |
1Mb/19P |
Thin-Film Technology |
| 02011J4R7AAWTR |
458Kb/20P |
Thin-Film Technology |
| 02011J4R7AAWTR |
217Kb/19P |
High purity of electrodes for very low and repeatable |
| 02011J4R7ABSTR |
1Mb/19P |
Thin-Film Technology |
| 02011J4R7ABSTR |
458Kb/20P |
Thin-Film Technology |
| 02011J4R7ABSTR |
217Kb/19P |
High purity of electrodes for very low and repeatable |
| 02011J4R7ABSTR500 |
1Mb/25P |
Thin-Film Technology |
| 02011J4R7ABTTR |
1Mb/19P |
Thin-Film Technology |
| 02011J4R7ABTTR |
458Kb/20P |
Thin-Film Technology |
| 02011J4R7ABTTR |
217Kb/19P |
High purity of electrodes for very low and repeatable |