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VS42CTQ030M3 Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
VS45AB
|
|
QFP | 18000 | 2016+ | Instock | 26-09-28 |
Inquiry
|
|
|
VS442AD
|
PB-FREE |
|
ROSH&New | 20000 | 2016+ | Instock | 26-09-28 |
Inquiry
|
|
VS4805DS
|
VS |
|
SOP8 | 420 | 2020+ | Instock | 26-09-28 |
Inquiry
|
| VS40N10AT |
|
TO-220 | 1050 | 20+PB | Pb-Free | 26-09-28 |
Inquiry
|
|
| VS47CTQ020SPBF | VISHAY/ |
|
10008 | 2020+ | Instock | 26-09-28 |
Inquiry
|
|
| VS43CTQ100STRLPBF | VISHAY/ |
|
132660 | 2020+ | Instock | 26-09-28 |
Inquiry
|
1
VS42CTQ030M3 Datasheet
| Mfg | Part # | Datasheet | Description |
 Astec America, Inc |
VS4 |
2Mb/8P |
1000 - 2500 Watts |
 Apex Electronics Co... |
VS4 |
1Mb/12P |
Rocker Switch, multiple contact arrangement |
 Emerson Network Pow... |
VS4/9 |
346Kb/8P |
VS Series |
 Faraday Technology |
VS400M |
39Kb/2P |
SERIAL DIGITAL VIDEO PASSIVE SIGNAL SPLITTER |
 SHENZHEN DOINGTER S... |
VS40120AD |
1Mb/6P |
N-Channel MOSFET uses advanced SGT technology |
 Vectron Internation... |
VS402 |
569Kb/6P |
Dual Frequency VCSO |
|
SHENZHEN DOINGTER S... |
VS40200AD |
2Mb/6P |
N-Channel MOSFET uses advanced SGT technology |
| VS40280AT |
2Mb/6P |
N-Channel MOSFET uses advanced trench technology | |
| VS4080AD |
2Mb/5P |
N-Channel MOSFET uses advanced trench technology | |
| VS40N10AT |
942Kb/3P |
N-Channel MOSFET uses advanced trench technology | |
 Rohm |
VS40VUA1VWM |
1Mb/10P |
Transient Voltage Suppressor 2022/02/08_Rev.001 |
| VS40VUA1VWMTF |
2Mb/10P |
Transient Voltage Suppressor 2022/02/08_Rev.001 |
|
|
SHENZHEN DOINGTER S... |
VS4310AT |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
|
Rohm |
VS43VLNVWM |
1Mb/10P |
Transient Voltage Suppressor 2022/02/08_Rev.001 |
| VS43VLNVWMTF |
2Mb/10P |
Transient Voltage Suppressor 2022/02/08_Rev.001 |
|
|
SHENZHEN DOINGTER S... |
VS4407AS |
1Mb/5P |
P-Channel MOSFET uses advanced trench technology |
| VS4407BS |
1Mb/4P |
P-Channel MOSFET uses advanced trench technology | |
| VS4449AS |
1Mb/4P |
P-Channel MOSFET uses advanced trench technology | |
 New Jersey Semi-Con... |
VS448X |
181Kb/2P |
2 Amp Fast Recovery Time Epoxy Bridge Rectifiers |
 VBsemi Electronics ... |
VS4518AH |
457Kb/9P |
P-Channel 30-V (D-S) MOSFET |
|
SHENZHEN DOINGTER S... |
VS4518AS |
1Mb/4P |
P-Channel MOSFET uses advanced trench technology |
| VS4559MS |
3Mb/7P |
N-Chanel and P-Channel MOSFET use advanced trench technology | |
| VS4604AT |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology | |
|
VBsemi Electronics ... |
VS4640AC |
530Kb/9P |
N-Channel 60-V (D-S) MOSFET |
|
SHENZHEN DOINGTER S... |
VS4805DS |
1Mb/4P |
Dual P-Channel MOSFET uses advanced trench technology |
| VS4812DS |
1Mb/5P |
Dual N-Channel MOSFET uses advanced trench technology | |
 Vishay Siliconix |
VS48CTQ060-1-M3 |
183Kb/9P |
High Performance Schottky Rectifiers Revision: 28-Feb-14 |
|
Rohm |
VS48VLNVWM |
1Mb/10P |
Transient Voltage Suppressor 2022/02/08_Rev.001 |
| VS48VLNVWMTF |
2Mb/10P |
Transient Voltage Suppressor 2022/02/08_Rev.001 |
|
| VS4V5BU1QS |
994Kb/8P |
Transient Voltage Suppressor |