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VBT2060CM38W Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| VBT2060C-M3/8W | VishaySemi |
|
TO-263AB | 357 | 20+PB | Pb-Free | 26-09-26 |
Inquiry
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1
VBT2060CM38W Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
VBT2060C-E3 |
158Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A Revision: 15-Dec-16 |
| VBT2060C-E3 |
203Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VBT2060C-E3/4W |
173Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 08-Sep-09 |
|
| VBT2060C-E3/8W |
173Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 08-Sep-09 |
|
| VBT2060C-M3 |
517Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A Revision: 21-May-13 |
|
| VBT2060C-M3 |
103Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VBT2060C-M3_15 |
507Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 21-May-13 |
|
| VBT2060C-M3_V01 |
103Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |