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VB60100CHE3I Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| VB60100CHE3/I | VishaySemi |
|
TO-263AB | 357 | 20+PB | Pb-Free | 26-10-04 |
Inquiry
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1
VB60100CHE3I Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
VB60100C |
149Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 16-Jan-08 |
| VB60100C |
150Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 19-May-08 |
|
| VB60100C |
142Kb/4P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 16-Aug-13 |
|
| VB60100C |
104Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB60100C-E3/4W |
149Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 16-Jan-08 |
|
| VB60100C-E3/4W |
150Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 19-May-08 |
|
| VB60100C-E3/4W |
146Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VB60100C-E3/8W |
149Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 16-Jan-08 |
|
| VB60100C-E3/8W |
150Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 19-May-08 |
|
| VB60100C-E3/8W |
146Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VB60100C-M3 |
88Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 15-May-13 |
|
| VB60100C-M3_15 |
78Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 15-May-13 |