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VB40100GE38W Search results
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info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
VB40100G
|
VISHAY |
|
TO-263 | 20000 | 2016+ | Instock | 26-09-25 |
Inquiry
|
|
VB40100G-E3/8W
|
VISHAY |
|
TO-263-3(D2PAK) | 1050 | 20+PB | Pb-Free | 26-09-25 |
Inquiry
|
1
VB40100GE38W Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
VB40100G |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A Revision: 19-May-08 |
| VB40100G-E3 |
161Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 09-Sep-13 |
|
| VB40100G-E3 |
151Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 09-Sep-13 |
|
| VB40100G-E3 |
217Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB40100G-E3/4W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A Revision: 19-May-08 |
|
| VB40100G-E3/4W |
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VB40100G-E3/8W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A Revision: 19-May-08 |
|
| VB40100G-E3/8W |
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |