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VB40100C Search results
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info
IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
VB40100C
|
VISHAY |
|
TO-263 | 20000 | 2016+ | Instock | 26-09-25 |
Inquiry
|
|
VB40100C-E3/4W
|
VISHAY/ |
|
192000 | 2020+ | Instock | 26-09-25 |
Inquiry
|
|
|
VB40100C-E3/8W
|
VISHAY/ |
|
2131200 | 2020+ | Instock | 26-09-25 |
Inquiry
|
|
| VB40100C-M3/8W | VishaySemi |
|
TO-263AB | 357 | 20+PB | Pb-Free | 26-09-25 |
Inquiry
|
1
VB40100C Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
VB40100C |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 26-May-08 |
| VB40100C |
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB40100C-E3 |
160Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 14-Nov-14 |
|
| VB40100C-E3 |
155Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Revision: 14-Nov-14 |
|
| VB40100C-E3 |
1Mb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB40100C-E3/4W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 26-May-08 |
|
| VB40100C-E3/4W |
157Kb/5P |
Dual High-Voltage Trench MOS barrier Schottky Rectifier Revision: 19-Oct-11 |
|
| VB40100C-E3/8W |
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 26-May-08 |
|
| VB40100C-E3/8W |
157Kb/5P |
Dual High-Voltage Trench MOS barrier Schottky Rectifier Revision: 19-Oct-11 |
|
| VB40100C-M3 |
91Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 03-Jan-17 |
|
| VB40100C-M3_15 |
79Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 15-May-13 |
|
| VB40100CHM3 |
91Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A Revision: 03-Jan-17 |