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VB20150C Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
VB20150C
|
VISHAY |
|
TO-263 | 20000 | 2016+ | Instock | 26-09-25 |
Inquiry
|
| VB20150C-E3/4W | VishaySemi |
|
TO-263AB | 357 | 20+PB | Pb-Free | 26-09-25 |
Inquiry
|
| VB20150C-M3/8W | VishaySemi |
|
TO-263AB | 357 | 20+PB | Pb-Free | 26-09-25 |
Inquiry
|
1
VB20150C Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
VB20150C |
168Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A Revision: 19-May-08 |
| VB20150C |
161Kb/6P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 20-Nov-12 |
|
| VB20150C-E3 |
161Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A Revision: 13-Dec-16 |
|
| VB20150C-E3 |
218Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB20150C-E3/4W |
168Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A Revision: 19-May-08 |
|
| VB20150C-E3/4W |
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VB20150C-E3/8W |
168Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A Revision: 19-May-08 |
|
| VB20150C-E3/8W |
163Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 24-Jun-09 |
|
| VB20150C-M3 |
89Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5.0 A Revision: 30-Aug-13 |
|
| VB20150C-M3 |
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |
|
| VB20150C-M3_15 |
79Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Revision: 30-Aug-13 |
|
| VB20150C-M3_V01 |
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 01-Jan-2022 |