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V12WYE2MPVC Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
V12W60C-M3/I
|
VishaySemi |
|
TO-252D-Pak | 357 | 20+PB | Pb-Free | 26-09-20 |
Inquiry
|
|
V12WM100C-M3/I
|
VishaySemi |
|
TO-252D-Pak | 357 | 20+PB | Pb-Free | 26-09-20 |
Inquiry
|
1
V12WYE2MPVC Datasheet
| Mfg | Part # | Datasheet | Description |
 Vishay Siliconix |
V12W60C-M3 |
123Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier Revision: 04-Dec-13 |
| V12W60C-M3 |
90Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier 08-Feb-17 |
|
| V12W60C-M3I |
123Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier Revision: 04-Dec-13 |
|
| V12W60C-M3_15 |
124Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A Revision: 04-Dec-13 |
|
| V12W60C-M3_15 |
116Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier Revision: 04-Dec-13 |
|
| V12W60C-M3_V01 |
90Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier 08-Feb-17 |
|
| V12WM100C-M3 |
122Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier Revision: 04-Dec-13 |
|
| V12WM100C-M3 |
123Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 3 A Revision: 04-Dec-13 |
|
| V12WM100C-M3 |
89Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier 08-Feb-17 |
|
| V12WM100C-M3I |
122Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier Revision: 04-Dec-13 |
|
| V12WM100C-M3_15 |
123Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 3 A Revision: 04-Dec-13 |
|
| V12WM100C-M3_V01 |
89Kb/5P |
Dual Trench MOS Barrier Schottky Rectifier 08-Feb-17 |