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T491X226K035AT Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
T491X226K035AS
|
KEMET/ |
|
SMD | 1320000 | 2020+ | Instock | 26-09-18 |
Inquiry
|
1
T491X226K035AT Datasheet
| Mfg | Part # | Datasheet | Description |
 Freescale Semicondu... |
T491X226K035AT |
868Kb/13P |
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| T491X226K035AT |
1Mb/27P |
RF Power LDMOS Transistors | |
| T491X226K035AT |
748Kb/11P |
RF Power Field Effect Transistor | |
| T491X226K035AT |
948Kb/19P |
RF Power LDMOS Transistors | |
| T491X226K035AT |
1Mb/20P |
RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs | |
| T491X226K035AT |
1Mb/19P |
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET | |
 Kemet Corporation |
T491X226K035AT |
81Kb/1P |
Tantalum, MnO2 Tantalum, T491, 22 uF, 10%, 35 V, 7343, SMD, MnO2, Molded, 700 mOhms, Height Max = 4.3mm |
 NXP Semiconductors |
T491X226K035AT |
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor Rev. 4, 8/2013 |
| T491X226K035AT |
1Mb/19P |
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Rev. 0, 7/2014 |
|
| T491X226K035AT |
1Mb/18P |
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Rev. 0, 7/2014 |
|
| T491X226K035AT |
807Kb/15P |
RF Power Field Effect Transistors Rev. 2, 3/2011 |