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RJK6002DPD00J2 Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| RJK6002DPD | RENESAS/ |
|
SOT-252 | 210000 | 2020+ | Instock | 26-09-22 |
Inquiry
|
| RJK6002DPD-00#J2 | RenesasEle |
|
MP-3A | 357 | 20+PB | Pb-Free | 26-09-22 |
Inquiry
|
1
RJK6002DPD00J2 Datasheet
| Mfg | Part # | Datasheet | Description |
 Renesas Technology ... |
RJK6002DPD |
74Kb/4P |
Silicon N Channel MOS FET High Speed Power Switching |
 VBsemi Electronics ... |
RJK6002DPD |
1Mb/9P |
N-Channel 650 V (D-S) MOSFET |
 SHENZHEN DOINGTER S... |
RJK6002DPD |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
|
Renesas Technology ... |
RJK6002DPD-00-J2 |
74Kb/4P |
Silicon N Channel MOS FET High Speed Power Switching |
| RJK6002DPD_15 |
113Kb/9P |
Silicon N Channel MOS FET High Speed Power Switching |