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QM400DY2H Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
QM400DY-2H
|
MITSUBISHI |
|
MODULE | 7 | 2020+ | Instock | 26-10-07 |
Inquiry
|
1
QM400DY2H Datasheet
| Mfg | Part # | Datasheet | Description |
 VBsemi Electronics ... |
QM4001S |
1,016Kb/9P |
P-Channel 40 V (D-S) MOSFET |
 SHENZHEN DOINGTER S... |
QM4001S |
1Mb/5P |
P-Channel MOSFET uses advanced trench technology |
 uPI Group Inc. |
QM4002AD |
267Kb/4P |
N-Ch 40V Fast Switching MOSFETs |
|
VBsemi Electronics ... |
QM4002AD |
999Kb/7P |
N-Channel 4 0-V (D-S) MOSFET |
|
SHENZHEN DOINGTER S... |
QM4002D |
636Kb/5P |
N-Channel MOSFET uses advanced trench technology |
|
VBsemi Electronics ... |
QM4002S |
1Mb/9P |
N-Channel 40-V (D-S) MOSFET |
| QM4003D |
1Mb/9P |
P-Channel 40 V (D-S) MOSFET | |
| QM4003S |
1,015Kb/9P |
P-Channel 40 V (D-S) MOSFET | |
|
SHENZHEN DOINGTER S... |
QM4003S |
1Mb/4P |
P-Channel MOSFET uses advanced trench technology |
|
uPI Group Inc. |
QM4004D |
220Kb/4P |
N-Ch 40V Fast Switching MOSFETs |
|
VBsemi Electronics ... |
QM4004S |
1Mb/9P |
N-Channel 40-V (D-S) MOSFET |
|
SHENZHEN DOINGTER S... |
QM4004S |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
| QM4006D |
2Mb/5P |
N-Channel MOSFET uses advanced trench technology | |
|
uPI Group Inc. |
QM4008K |
246Kb/4P |
N-Ch 40V Fast Switching MOSFETs |
 Mitsubishi Electric... |
QM400HA-24 |
70Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE |
| QM400HA-24B |
73Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE | |
| QM400HA-2H |
69Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE | |
| QM400HA-2HB |
75Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE | |
| QM400HA-H |
65Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE |