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NE551D Search results
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IC Agent Electronics Ins
USA
Kevin@ic-agent.com
| Part # | Mfg | Datasheet | Description | Q'ty | Datacode | Location | Reg Date | RFQ |
| NE551D |
|
9314 | 18000 | 2016+ | Instock | 26-09-24 |
Inquiry
|
1
NE551D Datasheet
| Mfg | Part # | Datasheet | Description |
 NEC |
NE5510179A |
39Kb/4P |
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
 California Eastern ... |
NE5510179A |
42Kb/4P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
|
NEC |
NE5510179A-T1 |
39Kb/4P |
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
|
California Eastern ... |
NE5510179A-T1 |
42Kb/4P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS |
|
NEC |
NE5510279A |
39Kb/5P |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS |
|
California Eastern ... |
NE5510279A |
42Kb/5P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS |
 Renesas Technology ... |
NE5510279A |
288Kb/12P |
SILICON POWER MOS FET 2003 |
|
NEC |
NE5510279A-T1 |
39Kb/5P |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS |
|
California Eastern ... |
NE5510279A-T1 |
42Kb/5P |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS |
|
Renesas Technology ... |
NE5510279A-T1 |
288Kb/12P |
SILICON POWER MOS FET 2003 |
|
NEC |
NE5511279A |
99Kb/3P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
California Eastern ... |
NE5511279A |
296Kb/4P |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| NE5511279A |
297Kb/4P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET | |
|
Renesas Technology ... |
NE5511279A |
272Kb/10P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE5511279A-A |
297Kb/4P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
NEC |
NE5511279A-T1 |
99Kb/3P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
Renesas Technology ... |
NE5511279A-T1 |
272Kb/10P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE5511279A-T1-A |
296Kb/4P |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
NEC |
NE5511279A-T1A |
99Kb/3P |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
Renesas Technology ... |
NE5511279A-T1A |
272Kb/10P |
SILICON POWER MOS FET 2003 |
|
California Eastern ... |
NE5511279A-T1A-A |
296Kb/4P |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
 NXP Semiconductors |
NE5512 |
33Kb/4P |
Dual high-performance operational amplifier August 31, 1994 |
| NE5512D |
33Kb/4P |
Dual high-performance operational amplifier August 31, 1994 |
|
| NE5512N |
33Kb/4P |
Dual high-performance operational amplifier August 31, 1994 |
|
| NE5514 |
54Kb/3P |
Quad high-performance operational amplifier August 31, 1994 |
|
| NE5514D |
54Kb/3P |
Quad high-performance operational amplifier August 31, 1994 |
|
| NE5514N |
54Kb/3P |
Quad high-performance operational amplifier August 31, 1994 |
|
| NE5517 |
298Kb/13P |
Dual operational transconductance amplifier 2002 Dec 06 |
|
| NE5517 |
193Kb/18P |
Dual operational transconductance amplifier 2002 Dec 06 |
|
 ON Semiconductor |
NE5517 |
187Kb/14P |
Dual Operational Transconductance Amplifier April, 2006 ??Rev. 3 |