| Mfg |
Part # |
Datasheet |
Description |
 NXP Semiconductors |
C8A50Z4 |
364Kb/9P |
RF Power LDMOS Transistor |
 Anaren Microwave |
C8A50Z4A |
103Kb/3P |
Surface Mount Termination 8 Watts, 50廓 |
 NXP Semiconductors |
C8A50Z4A |
379Kb/9P |
RF Power GaN Transistor |
| C8A50Z4A |
389Kb/16P |
RF Power LDMOS Transistor |
| C8A50Z4A |
385Kb/17P |
RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET Rev. 1, 11/2022 |
| C8A50Z4A |
362Kb/20P |
RF Power LDMOS Transistor Rev. 2, 05/2022 |
| C8A50Z4A |
414Kb/18P |
1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR Rev. 1, 08/2020 |
 Anaren Microwave |
C8A50Z4B |
423Kb/2P |
Surface Mount Termination |
 NXP Semiconductors |
C8A50Z4B |
319Kb/13P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 09/2018 |
| C8A50Z4B |
466Kb/13P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 11/2018 |
| C8A50Z4B |
470Kb/14P |
RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 03/2021 |
 Fox Electronics |
C8AQ |
222Kb/2P |
10 x 4.5mm SMD Crystal |